Zobrazeno 1 - 10
of 56
pro vyhledávání: '"A. Picos-Vega"'
Autor:
Picos-Vega, A., Ramı́rez-Bon, R.
Publikováno v:
In Journal of Non-Crystalline Solids 2002 299 Part 1:439-443
Autor:
Rivera-Alvarez, Z, Hernández, L, Becerril, M, Picos-Vega, A, Zelaya-Angel, O *, Ramı́rez-Bon, R, Vargas-Garcı́a, J.R
Publikováno v:
In Solid State Communications 2000 113(11):621-625
Autor:
Picos-Vega, A., Arizpe-Chávez, H., Zelaya-Angel, O., Ramírez-Bon, R., Espinoza-Beltrán, F. J.
Publikováno v:
Journal of Applied Physics; 6/1/2001, Vol. 89 Issue 11, p6073, 6p, 2 Black and White Photographs, 1 Chart, 5 Graphs
Autor:
Picos-Vega, A.1, Ramírez-Bon, R.1, Espinoza-Beltrán, F. J.2, Zelaya-Angel, O.1, González-Hernández, J.2, Chao, B.3
Publikováno v:
Philosophical Magazine A. Jul2000, Vol. 80 Issue 7, p1621-1628. 8p.
Publikováno v:
In Vacuum 1999 52(1):99-102
Autor:
Becerril, M., Picos-Vega, A., Zelaya-Angel, O., Ramirez-Bon, R. *, Espinoza-Beltrán, F.J., Gonzcález-Hernández, J., Chao, B.
Publikováno v:
In Journal of Physics and Chemistry of Solids 1999 60(2):257-265
Autor:
Picos-Vega, A., Becerril, M., Zelaya-Angel, O., Ramírez-Bon, R., Espinoza-beltrán, F. J., González-Hernández, J., Jiménez-Sandoval, S., Chao, B.
Publikováno v:
Journal of Applied Physics; 1/15/1998, Vol. 83 Issue 2, p760, 4p, 5 Graphs
Autor:
A. Picos-Vega, R. Ramı́rez-Bon
Publikováno v:
Journal of Non-Crystalline Solids. :439-443
We simulate the charge carrier transient transport in amorphous layers of multilayer structures. We studied the effect of the time delay of carriers at interfaces on the transient photocurrent shape. The characteristics of transient photocurrents on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54b355e19c6ddf1d69f2dbb6319bc792
https://doi.org/10.1016/s0022-3093(01)01174-7
https://doi.org/10.1016/s0022-3093(01)01174-7
Autor:
Abraham Picos-Vega, Mufei Xiao
Publikováno v:
Physics Letters A. 285:395-400
We demonstrate that the edge recoiling of diffusion may cause anomaly in transient photo-currents measured by the time-of-flight technique for homogeneous amorphous materials. The universality of the anomalous transports is successfully revealed in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8166f259dfe58fe09a3893a8eb609ae7
https://doi.org/10.1016/s0375-9601(01)00359-0
https://doi.org/10.1016/s0375-9601(01)00359-0
Publikováno v:
Journal of Applied Physics. 89:6073-6078
Polycrystalline CdTe thin films, with oxygen concentrations (x) in the range of 0.01–15 at. %, were grown at room temperature on 7059 Corning glass by means of the rf sputtering method. For low oxygen concentrations (x⩽0.3 at. %) the CdTe develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fc073b54954bc6457f51958c2816df9
https://doi.org/10.1063/1.1342025
https://doi.org/10.1063/1.1342025