Zobrazeno 1 - 3
of 3
pro vyhledávání: '"A. Patti 2"'
Autor:
F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2
Publikováno v:
Physica status solidi. A, Applications and materials science
214 (2017): 1600357-1–1600357-7. doi:10.1002/pssa.201600357
info:cnr-pdr/source/autori:F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2/titolo:Ti%2FAl-based contacts to p-type SiC and GaN for power device applications/doi:10.1002%2Fpssa.201600357/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600357-1/pagina_a:1600357-7/intervallo_pagine:1600357-1–1600357-7/volume:214
214 (2017): 1600357-1–1600357-7. doi:10.1002/pssa.201600357
info:cnr-pdr/source/autori:F. Roccaforte 1, M. Vivona 1, G. Greco 1, R. Lo Nigro 1, F. Giannazzo 1, S. Di Franco 1, C. Bongiorno 1, F. Iucolano 2, A. Frazzetto 2, S. Rascuna 2, A. Patti 2, M. Saggio, 2/titolo:Ti%2FAl-based contacts to p-type SiC and GaN for power device applications/doi:10.1002%2Fpssa.201600357/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600357-1/pagina_a:1600357-7/intervallo_pagine:1600357-1–1600357-7/volume:214
Metal contacts (Schottky or Ohmic) to p-type wide band gap (WBG) semiconductors SiC and GaN are important for power devices technologies. This work reports on the properties of Ti/Al-based contacts to p-type 4H-SiC and p-type GaN, monitored using dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::46b0334f4e76e026f90902f731890d2b
Autor:
P. Fiorenza 1, G. Greco 1, M. Vivona 1, F. Giannazzo 1, S. Di Franco 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Iucolano 2, A. Patti 2, F. Roccaforte 1
Publikováno v:
Physica status solidi. A, Applications and materials science
214 (2017): 1600366-1–1600366-7. doi:10.1002/pssa.201600366
info:cnr-pdr/source/autori:P. Fiorenza 1, G. Greco 1, M. Vivona 1, F. Giannazzo 1, S. Di Franco 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Iucolano 2, A. Patti 2, F. Roccaforte 1/titolo:Electrical characterization of trapping phenomena at SiO2%2FSiC and SiO2%2FGaN in MOS-based devices/doi:10.1002%2Fpssa.201600366/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600366-1/pagina_a:1600366-7/intervallo_pagine:1600366-1–1600366-7/volume:214
214 (2017): 1600366-1–1600366-7. doi:10.1002/pssa.201600366
info:cnr-pdr/source/autori:P. Fiorenza 1, G. Greco 1, M. Vivona 1, F. Giannazzo 1, S. Di Franco 1, A. Frazzetto 2, A. Guarnera 2, M. Saggio 2, F. Iucolano 2, A. Patti 2, F. Roccaforte 1/titolo:Electrical characterization of trapping phenomena at SiO2%2FSiC and SiO2%2FGaN in MOS-based devices/doi:10.1002%2Fpssa.201600366/rivista:Physica status solidi. A, Applications and materials science (Print)/anno:2017/pagina_da:1600366-1/pagina_a:1600366-7/intervallo_pagine:1600366-1–1600366-7/volume:214
In this paper, some aspects of the electrical characterization of trapping phenomena occurring at interfaces between insulators and wide band semiconductors (WBG) are presented, with a focus on the SiO2/SiC and SiO2/GaNsystems. In particular, time re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::e42244b78b02d9a721090b69f8a95f71
Autor:
P. Fiorenza 1, G. Greco 1, F. Iucolano 2, A. Parisi 2, S. Reina 2, A. Patti 2, F. Roccaforte 1
Publikováno v:
Materials science forum 858 (2016): 1178–1181. doi:10.4028/www.scientific.net/MSF.858.1178
info:cnr-pdr/source/autori:P. Fiorenza 1; G. Greco 1; F. Iucolano 2; A. Parisi 2; S. Reina 2; A. Patti 2; F. Roccaforte 1/titolo:Trapping states in SiO2%2FGaN MOS capacitors fabricated on recessed AlGaN%2FGaN heterostructures/doi:10.4028%2Fwww.scientific.net%2FMSF.858.1178/rivista:Materials science forum/anno:2016/pagina_da:1178/pagina_a:1181/intervallo_pagine:1178–1181/volume:858
info:cnr-pdr/source/autori:P. Fiorenza 1; G. Greco 1; F. Iucolano 2; A. Parisi 2; S. Reina 2; A. Patti 2; F. Roccaforte 1/titolo:Trapping states in SiO2%2FGaN MOS capacitors fabricated on recessed AlGaN%2FGaN heterostructures/doi:10.4028%2Fwww.scientific.net%2FMSF.858.1178/rivista:Materials science forum/anno:2016/pagina_da:1178/pagina_a:1181/intervallo_pagine:1178–1181/volume:858
In this work, the different nature of trapping states in metal-oxide-semiconductor (MOS) capacitors fabricated on recessed AlGaN/GaN heterostructures has been investigated. In particular, the origin of both fast and slow states has been elucidated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::cc5ad99fa8791373edbe5357b52631cd
https://publications.cnr.it/doc/357652
https://publications.cnr.it/doc/357652