Zobrazeno 1 - 10
of 68
pro vyhledávání: '"A. Paschin"'
Autor:
I. O. Akhundov, Alexander E. Klimov, S. P. Suprun, E. V. Fedosenko, D. V. Ishchenko, V. N. Sherstyakova, Igor G. Neizvestny, A. S. Tarasov, Nikolai S. Paschin, A. N. Akimov, Oleg E. Tereshchenko
Publikováno v:
Semiconductors. 54:951-955
The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c58faff57a3d5874a14037b49044d7d
https://doi.org/10.1134/s1063782620080035
https://doi.org/10.1134/s1063782620080035
Autor:
Denis V. Ishchenko, Alexey Nikolaevich Akimov, Nikolay Sergeevich Paschin, Alexandr Eduardovich Klimov, Oleg Evgenievich Tereshchenko, V. N. Sherstyakova, Evgenij Vladimirovich Fedosenko
Publikováno v:
Key Engineering Materials. 806:3-9
The effect of surface chemical treatment on current-voltage (IV) characteristics of high-resistance MBE-grown PbSnTe:In films in space charge limited current (SCLC) regimes has been studied. At T=4.2 K depending on surface chemical treatment the curr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89e7dacd2bee225da25214b683f368f7
https://doi.org/10.4028/www.scientific.net/kem.806.3
https://doi.org/10.4028/www.scientific.net/kem.806.3
Autor:
null Tereshchenko O. E., null Suprun S. P., null Paschin N. S., null Sidorov G. Yu., null Neizvestny I. G., null Matyushenko E. V., null Gorshkon D. V., null Golyashov V. A., null Klimov A. E.
Publikováno v:
Semiconductors. 56:182
Results on the creation and properties of transistor-type MIS structures (MIST) with an Al2O3 thin-film gate dielectric based on PbSnTe : In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3c9f95971ff9c3623faea7887af76ec
https://doi.org/10.21883/sc.2022.02.53273.30
https://doi.org/10.21883/sc.2022.02.53273.30
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
A. N. Akimov, M. L. Savchenko, V. S. Epov, Alexander E. Klimov, Nikolai S. Paschin, E. V. Fedosenko, A. S. Yaroshevich
Publikováno v:
Semiconductors. 51:1522-1526
PbSnTe:In films with a long-wavelength sensitivity limit of over 20 μm and low “dark” conductivity are studied. The spectral dependences of the photoconductivity obtained at different temperatures using a Fourier spectrometer are compared with d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e92878cbdbf36168d53fba869f3670a6
https://doi.org/10.1134/s1063782617110033
https://doi.org/10.1134/s1063782617110033
Autor:
Denis V. Ishchenko, Artem N. Papantonopulo, V. N. Sherstyakova, Nikolai S. Paschin, Alexander E. Klimov, A. N. Akimov
Publikováno v:
2017 18th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
The experimental results on photoconductivity of PbSnTe:In films in the case of interband excitation under variable light conditions with the fixation of the photocurrent are discussed in the paper. It is shown that a decrease in luminance by more th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c502ae87b7242c0fe7d0e359c4587930
https://doi.org/10.1109/edm.2017.7981698
https://doi.org/10.1109/edm.2017.7981698
Autor:
Nikolai S. Paschin, Denis V. Ishchenko, Andrey S. Tarasov, V. N. Sherstyakova, A. N. Akimov, Alexander E. Klimov
Publikováno v:
2017 18th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
Method of producing planar patterns (p+-i-p+, p+-i-n+) based on thin films of Pb 1−x Sn x Te:In is described. Experimental measurements of stationary and transient photoconductivity at liquid-helium temperatures are presented only for p+-i-p+ struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e098f284cc878320715251434b01371
https://doi.org/10.1109/edm.2017.7981701
https://doi.org/10.1109/edm.2017.7981701
Publikováno v:
Advanced Materials Research. 996:386-391
An electrode system for inducing a high density pulsed electric current (PEC) into the material for residual stresses (RS) relaxation has been proposed. A new non-destructive technology for determination of RS using electron speckle interferometry in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::021a2627dd1f5aa6c2f6ca99b8861cce
https://doi.org/10.4028/www.scientific.net/amr.996.386
https://doi.org/10.4028/www.scientific.net/amr.996.386
Publikováno v:
Journal of Physics: Conference Series. 946:012016
The analysis of experimental data on the observation of photoresponse in narrow gap semiconductor Pb1?x Sn x Te:In films grown by the method of molecular beam epitaxy, exposing samples to the powerful radiation of the Novosibirsk free electron laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f77b7b74e8bb1c35f1619840565c6b48
https://doi.org/10.1088/1742-6596/946/1/012016
https://doi.org/10.1088/1742-6596/946/1/012016
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.