Zobrazeno 1 - 10
of 26
pro vyhledávání: '"A. P. Solonitsyna"'
The core-level and valence band electronic structure of the well-defined near-surface layer of n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy before and after modification of the layer by an Ar+ ion beam
Externí odkaz:
http://arxiv.org/abs/1612.06798
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:884-889
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcb18ac018c487a74025f6b1eacfe8e1
https://doi.org/10.1134/s1027451022050342
https://doi.org/10.1134/s1027451022050342
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:759-763
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94a47d6c4348343dc66dcc68e28323e3
https://doi.org/10.1134/s1027451022050196
https://doi.org/10.1134/s1027451022050196
Publikováno v:
Semiconductors. 54:1702-1705
The core-level and valence band electronic structure of the n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy after irradiation by an Ar+ ion beam with energy Ei = 1500 eV and fluence Q = 1 × 1015 ions/cm2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e3b62a5394bc3fb239682a98552e6af
https://doi.org/10.1134/s1063782620120222
https://doi.org/10.1134/s1063782620120222
Publikováno v:
Semiconductors. 53:1918-1921
Oxidation specific of the defected GaAs has been considered on the basis of elemental and chemical composition study of the oxide layer naturally emerged on the GaAs surface strongly irradiated by Ar+ ions with energy Ei = 3000 eV and fluence Q ~ 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f4a9982672451f4efd1d4db5919529e
https://doi.org/10.1134/s1063782619140124
https://doi.org/10.1134/s1063782619140124
Publikováno v:
Journal of Experimental and Theoretical Physics. 128:523-529
Particle trajectories are calculated to study the rainbow scattering and the focusing of Ar atoms on the Al(111) and Ag(111) crystal surfaces and Ne, Ar, and Kr atoms on the Al(001) crystal surface. The rainbow-scattering-induced features in spectra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7baaca3b1a07c738f85b83c9ad282bcc
https://doi.org/10.1134/s1063776119030014
https://doi.org/10.1134/s1063776119030014
Publikováno v:
Semiconductors. 52:2057-2060
The elemental and chemical compositions throughout the thickness of the GaAs native oxide layer slightly irradiated by Ar+ ions have been studied by synchrotron-based photoelectron spectroscopy at different photon energies enabling variation of probi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1287d05a0af9aa63d7e0d42383c24cb7
https://doi.org/10.1134/s1063782618160194
https://doi.org/10.1134/s1063782618160194
Publikováno v:
Surface and Coatings Technology. 344:149-153
Poor dielectric properties of GaAs oxides are the drawback of the GaAs-based electronics preventing using these oxides as dielectric layers. The elemental and chemical compositions of the GaAs native oxide layer slightly irradiated by Ar+ ions with t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73303bcfe057c0ce2d40ee0991f24ab2
https://doi.org/10.1016/j.surfcoat.2018.03.004
https://doi.org/10.1016/j.surfcoat.2018.03.004
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Akademický článek
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