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pro vyhledávání: '"A. P. Shotov"'
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Publikováno v:
Quantum Electronics. 23:292-295
The temperature dependence of the gain in narrow-gap semiconductors is analyzed, as is that of the threshold current in PbSe/PbSnSe DH lasers. Several channels for current flow are taken into account: tunneling, recombination at the heterojunction, a
Publikováno v:
Physics of Narrow Gap Semiconductors ISBN: 9783540111917
In monocrystalline Pb1-xSnxSe samples of n-type with 0 ≤x≤0.37 the variation of the Ha l coefficient was observed in 4.2-300K temperature region. A model of two levels was proposed and their energetic position as a function of temperature was det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c79e210a54de98a253fbf9e3f0109b66
https://doi.org/10.1007/3-540-11191-3_80
https://doi.org/10.1007/3-540-11191-3_80
Autor:
S. Yu. Savinov, M. V. Spiridonov, Yu B Konev, R Sh Islamov, A. P. Shotov, I. I. Zasavitskii, N N Sobolev, Vladimir N Ochkin, M. A. Kerimkulov
Publikováno v:
Journal of Soviet Laser Research. 11:361-375
Publikováno v:
Soviet Journal of Quantum Electronics. 22:111-113
An investigation was made of the current-voltage characteristics of injection lasers with isoperiodic PbSnSeTe layers and of double-heterostructure lasers with a controlled carrier-density profile, based on lead selenide. The investigation was carrie
Autor:
Grigorii N Makarov, A. P. Shotov, I. Pak, Yu.A. Kuritsyn, O. I. Davarashvili, V. R. Mironenko, A. V. Kunets
Publikováno v:
Soviet Journal of Quantum Electronics. 20:993-995
A method for measuring the line width Γ of the emission spectrum of a TEA CO2 laser is described and the results of such measurements are given. The experimental value Γ = 0.013 ± 0.002 cm − 1 is compared with the results of a simple modeling ca
Autor:
Yu. G. Selivanov, A P Shotov
Publikováno v:
Semiconductor Science and Technology. 5:S27-S29
Semiconductor single-quantum-well double-heterostructure lasers with a Pb0.95Sn0.05Se active region from Lz=400 to 2000 AA were fabricated by hot wall molecular epitaxy. For Lz 1000 AA the laser emission corresponds to the energy gap of the material
Autor:
Boris G. Sartakov, A. E. Varfolomeev, Sergey Sergeivich Alimpiev, Ivan I. Zasavitskii, A. P. Shotov, D. K. Bronnikov, G S Baronov, S M Nikiforov
Publikováno v:
SPIE Proceedings.
The high resolution spectra of the 1 - 2 and 2 - 3 transitions between excited vibrational levels of SF 6 molecules cooled to T equals 30 K in supersonic jets have been experimentally investigated by the double resonance method. A tunable high pressu
Autor:
A. P. Shotov
Publikováno v:
SPIE Proceedings.
The current status of the lead salt diode lasers developed at Lebedev Physical Institute is described. Diffused lasers, LPE lattice-matched PbSnSeTe lasers, PbSSe diode lasers with controlled carrier concentration, and PbS/PbSSes/PbSnSe heterostructu
Autor:
N G Basov, Vitalii L Ginzburg, Oleg N Krokhin, Leonid Veniaminovich Keldysh, Yurii V. Kopaev, Viktor P Silin, L.S. Smirnov, Evgenii L. Feinberg, Aleksei A. Gippius, A. P. Shotov, V.S. Dneprovskii, Vyacheslav V. Krasnopevtsev
Publikováno v:
Physics-Uspekhi. 43:193-194