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Publikováno v:
Radiation Effects and Defects in Solids. 127:183-189
Thermodynamical stability of defect drops (clusters) in semiconductors is shown. Composition and temperature effects upon the equilibrium size of the drops are studied. A possibility of point defects clusterization in radiation fields is shown. The p
Publikováno v:
Physica Status Solidi (a). 130:183-192
Results are given of low-t emperature optical absorption measurements in undoped GaP-c rystals and GaP doped with Te, S, Zn exposed to 4.5 to 14.5 MeV electron irradiation. In undoped crystals a substantial transformation of the absorption edge fine
Publikováno v:
Journal of Applied Spectroscopy. 56:507-509
Publikováno v:
physica status solidi (a). 118:K9-K11
Etude du recuit isochrone des defauts d'irradiation dans les cristaux de GaP irradies par des electrons de forte energie entre 77-300 K. L'irradiation a basse temperature resulte en l'abaissement de la conductance, de la mobilite des porteurs de char
Publikováno v:
Soviet Physics Journal. 23:936-939
The temperature dependences of the permittivity (e) and spontaneous polarization (Ps) measured at high pressures for BixSb1−xSI crystals were used to calculate the coefficients (α,β,γ) of the thermodynamic expansion and to plot the dependences o
Publikováno v:
Soviet Physics Journal. 19:1333-1337
Publikováno v:
Radiation Effects and Defects in Solids; November 1993, Vol. 127 Issue: 2 p183-189, 7p
Publikováno v:
Physica Status Solidi (A) - Applications and Materials Science; March 1992, Vol. 130 Issue: 1 p183-192, 10p
Publikováno v:
Chemischer Informationsdienst. 8