HIGH-TEMPERATURE ANNEALING OF SILICON SUBOXIDE THIN FILMS OBTAINED BY GAS-JET ELECTRON BEAM PLASMA CHEMICAL VAPOR DEPOSITION

Autor: E. A. Baranov, A. O. Zamchiy, N. A. Lunev, I. E. Merkulova, V. A. Volodin, M. R. Sharafutdinov, A. A. Shapovalova

Publikováno v: Journal of Applied Mechanics and Technical Physics. 63:757-764

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b19445794c94face0a3bdb73ebe23d25
https://doi.org/10.1134/s0021894422050030

Morphology and Optical Properties of a Composite Material Based on Gold Nanoparticles and Nonstoichiometric Silicon Oxide

Autor: Sergey V. Starinskiy, A. O. Zamchiy, E. A. Baranov

Publikováno v: Technical Physics Letters. 46:827-830

The morphology, structure, and optical properties of a composite material based on gold nanoparticles and thin film of amorphous nonstoichiometric silicon oxide (a-SiOx, x = 1.8) have been studied for the first time. Based on the obtained experimenta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a07bdad25240d3cef3216b49197fcbf5
https://doi.org/10.1134/s1063785020080283

Transparent silicon carbide/tunnel SiO 2 passivation for c‐Si solar cell front side: Enabling J sc > 42 mA/cm 2 and i V oc of 742 mV

Autor: Aryak Singh, A. O. Zamchiy, Kaining Ding, Miro Zeman, Malte Köhler, Kaifu Qiu, Alexander Eberst, Do Yun Kim, Olindo Isabella, Uwe Rau, Paul Alejandro Procel Moya, Manuel Pomaska, Friedhelm Finger, Vladimir Smirnov, Shenghao Li

Publikováno v: Progress in Photovoltaics: Research and Applications. 28:321-327

N-type microcrystalline silicon carbide (μc-SiC:H(n)) is a wide bandgap material that is very promising for the use on the front side of crystalline silicon (c-Si) solar cells. It offers a high optical transparency and a suitable refractive index th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2fed4ef774e9feb24aef3ddbb2d2ca5c
https://doi.org/10.1002/pip.3244

Achieving a high Short Circuit Current Density of 40.9 mA/cm² for Two-Side Contacted Silicon Heterojunction Solar Cells by using SiC-based Transparent Passivating Contacts

Autor: Kaining Ding, Kaifu Qiu, Alexander Eberst, Stefan Haas, Karsten Bittkau, Andreas Lambertz, Uwe Rau, Weiyuan Duan, Shenghao Li, A. O. Zamchiy, Thomas Kirchartz, Friedhelm Finger

Publikováno v: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).

A silicon heterojunction solar cell using silicon carbide as front contact is presented, which features the main advantage of high transparency. To enhance this advantage, an optical loss analysis is performed. It is found that reflection losses play

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c3a1a9ed50d129c49e369b0c423fd891
https://doi.org/10.1109/pvsc43889.2021.9518496

A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24%

Autor: Friedhelm Finger, Manuel Pomaska, Shenghao Li, Paul Procel, A. O. Zamchiy, Kaining Ding, Malte Köhler, Benjamin Klingebiel, Bart Macco, Alexander Eberst, Martina Luysberg, Uwe Rau, Rudi Santbergen, Olindo Isabella, Thomas Kirchartz, Weiyuan Duan, Andreas Lambertz, Pengfei Cao, Kaifu Qiu

Publikováno v: Nature energy 6(5), 529-537 (2021). doi:10.1038/s41560-021-00806-9
Nature Energy, 6(5)
Nature energy 6, 529–537 (2021). doi:10.1038/s41560-021-00806-9
Nature Energy, 6(5), 529-537. Nature Publishing Group

Nature energy (2021). doi:10.1038/s41560-021-00806-9
Published by Nature Publishing Group, London

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2e74ae6575e75db3fbc256b86fe225c
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85104802594