Zobrazeno 1 - 10
of 60
pro vyhledávání: '"A. O. Zakhar'in"'
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 42:986-1004
We discuss a possibility of achieving population inversion and the associated generation of stimulated terahertz radiation employing transitions between the quantum confinement energy levels of electrons in GaAs/AlGaAs quantum wells under interband p
Publikováno v:
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
A possibility to achieve population inversion and the associated generation of stimulated terahertz radiation employing transitions between energy levels of electrons in GaAs/AlGaAs quantum wells under resonant interband photoexcitation is discussed.
Publikováno v:
JETP Letters. 109:781-785
Stimulated terahertz emission owing to population inversion between exciton states in silicon crystals at intense interband photoexcitation is detected. The terahertz gain spectrum exhibits 13.7- and 15.5-meV lines, the gains of which reach 0.5 and 1
Publikováno v:
JETP Letters. 107:540-543
Terahertz photoluminescence of boron- and phosphorus-doped silicon at low temperatures under interband photoexcitation is investigated. The lines of radiative transitions between free-exciton levels and between the levels of shallow impurity centers
Autor:
Vladimir Ilich Sankin, A. G. Petrov, S. S. Nagalyuk, A. V. Andrianov, P. P. Shkrebiy, A. O. Zakhar'in
Publikováno v:
Journal of Infrared, Millimeter, and Terahertz Waves. 38:1530-1541
Recently, the intense terahertz electroluminescence from monopolar n++–n−–n+ structures of 8H-SiC natural superlattice at helium temperatures due to Bloch oscillations was found out. In the present work, we compare the THz emission and electric
Autor:
A. V. Andrianov, Yu. B. Vasilyev, A. O. Zakhar’in, V. V. Zabrodskii, S. V. Egorov, Nikolai A. Sobolev
Publikováno v:
Semiconductors. 51:604-607
Injection-induced terahertz electroluminescence from silicon p +–n structures is observed at helium temperatures. Structures fabricated by the diffusion of boron into a phosphorus-doped n-Si substrate are studied. Relatively narrow luminescence lin
Publikováno v:
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
Terahertz range photoluminescence from specially designed structures with tunnel coupled double quantum wells under interband optical excitation has been investigated. A series of narrow emission lines were observed and interpreted as intersubband ra
Autor:
A. O. Zakhar'in, A. V. Andrianov
Publikováno v:
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz).
We report results of experimental study of terahertz photoluminescence from silicon arising due to intra-exciton radiative transitions. These transitions are excited during the binding of nonequilibrium electrons and holes into free excitons. Experim
Autor:
A. V. Andrianov, A. O. Zakhar'in
Publikováno v:
physica status solidi (b). 256
Publikováno v:
Materials Science and Engineering: B. 263:114892
Terahertz photoluminescence from silicon crystals due to radiative transitions between the energy levels of free excitons has been studied up to intensities of interband photoexcitation significantly exceeding the threshold for the formation of elect