Zobrazeno 1 - 10
of 14
pro vyhledávání: '"A. O. Vorob'ev"'
Autor:
A. O. Vorob’ev, D. E. Kul’bakin, S. G. Chistyakov, A. D. Mitrichenko, G. E. Dubinenko, I. O. Akimchenko, E. V. Plotnikov, A. S. Gogolev, E. L. Choinzonov, V. M. Buznik, E. N. Bol’basov
Publikováno v:
Biomedical Engineering. 57:52-56
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8667660861b72c1eb5a7a399921a979e
https://doi.org/10.1007/s10527-023-10266-y
https://doi.org/10.1007/s10527-023-10266-y
Publikováno v:
Measurement Techniques. 59:911-915
Studies of variations in the hardness of representative materials of different classes over broad ranges of loads and depths of indentation are carried out. The usability of these materials is demonstrated and boundaries on the ranges of use of hardn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a317a8fc3ed79799fd6bc2f0cabe4421
https://doi.org/10.1007/s11018-016-1066-2
https://doi.org/10.1007/s11018-016-1066-2
Publikováno v:
Scopus-Elsevier
Hole conduction is produced in ZnO thin films by N+ ion implantation and annealing in an oxygen-radical atmosphere. It is established that oxygen radicals are necessary for hole conduction to appear. The implantation and annealing are found to change
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7955d9a3d4fea27de60616cae188046
https://doi.org/10.1023/b:rumi.0000026174.37727.e1
https://doi.org/10.1023/b:rumi.0000026174.37727.e1
Publikováno v:
Semiconductors. 36:265-269
It is shown that the introduction of a nitrogen acceptor impurity when growing zinc oxide films can result in the formation of hole conduction only after annealing in atomic oxygen vapor. Annealing affects not only electrical properties but also the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d09b033d04bd987809300237e1d08b4c
https://doi.org/10.1134/1.1461400
https://doi.org/10.1134/1.1461400
Publikováno v:
Semiconductors. 35:144-148
The effect of annealing in nitrogen plasma on the photoluminescence and photoconductivity spectra, conduction type, and the surface morphology of gallium nitride films doped with zinc was studied. Emergence of intense ultraviolet edge emission peakin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d961a1393a86ff3795725db55015ad13
https://doi.org/10.1134/1.1349920
https://doi.org/10.1134/1.1349920
Publikováno v:
Gigiena i sanitariia. (5)
Production activities of oil and gas industry plants are related to technogenic impact on the environment, which has a high environmental risk. This is associated with low levels of environmental orientation of sheer technological processes of explor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6b487d38c39e0d53918ff964594d01eb
https://pubmed.ncbi.nlm.nih.gov/24340907
https://pubmed.ncbi.nlm.nih.gov/24340907
Publikováno v:
Semiconductors. 33:668-671
Deep-level parameters determined from an analysis of the differential coefficients of the forward-bias current-voltage curves are compared in the example of commercial GaP LEDs. It is shown that these parameters are suitable for deep-center diagnosti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f62f1fd284e2ed9f3fb173370b9e5e86
https://doi.org/10.1134/1.1187753
https://doi.org/10.1134/1.1187753
Publikováno v:
Technical Physics Letters. 25:176-178
Deep levels were determined in GaP light-emitting diodes using the differential coefficients of the current-voltage characteristics. The parameters determined by different methods showed agreement. The measurement conditions are such that the measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f5eb4c0c5fb5f2156204f6686ddcf77
https://doi.org/10.1134/1.1262412
https://doi.org/10.1134/1.1262412
Autor:
O. Vorob’ev, Vladimir E. Fortov, Maxim Lebedev, E. V. Grabovskij, K. S. Dyabilin, V. P. Smirnov
Publikováno v:
AIP Conference Proceedings.
Behavior of matter under intensive soft x-radiation is consided. Impulse of x-radiation (about 2*1012W/cm2) produced in the sample strong shock wave, the velocity of this shock wave was measured. The shock compression about 300 GPa in the lead target
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f993c75bcd6f45e4d9bf8765baa7fb8d
https://doi.org/10.1063/1.50708
https://doi.org/10.1063/1.50708
Publikováno v:
Semiconductors. 35:695
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dc97835dfecdfa7c6cbadcbf618c709
https://doi.org/10.1134/1.1379407
https://doi.org/10.1134/1.1379407