Zobrazeno 1 - 10
of 12
pro vyhledávání: '"A. O. Balbekov"'
Autor:
N. A. Usachev, V. N. Kotov, I. A. Selishchev, A. O. Balbekov, D. I. Sotskov, V. V. Elesin, A. G. Kuznetsov
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
Design and testing results of I/Q mixer and voltage-controlled oscillator IP-blocks for application in 5G communications are presented. IP-blocks were implemented in a commercial 0.42/0.25 μm SiGe BiCMOS process. The test results demonstrate that de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e900e7df0e9596d94033ced5d5eeeb82
https://doi.org/10.1109/miel52794.2021.9569068
https://doi.org/10.1109/miel52794.2021.9569068
Autor:
Alexandra I. Shnaider, Maxim S. Gorbunov, Anton O. Balbekov, Igor A. Danilov, S G Bobkov, Y.B. Rogatkin
Publikováno v:
Acta Astronautica. 150:28-32
Space radiation interacting with electronic components of on-board computing or navigation unit can bring to it's malfunction. Using error tolerant electronic components is a key factor ensuring safety of Space missions. The Muller C-element is one o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb7f7b439c35ca223e5a667c3ce1eaf1
https://doi.org/10.1016/j.actaastro.2018.01.019
https://doi.org/10.1016/j.actaastro.2018.01.019
Publikováno v:
IEEE Transactions on Nuclear Science. 65:1914-1919
We present a convenient layout-aware circuit-level modeling technique based on two modeling approaches: single spot and distributed circuit representing the diffusion- and circuit-driven charge collection processes correspondingly. The calibration is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::799658f654ad12599557d86dc93877c3
https://doi.org/10.1109/tns.2018.2802205
https://doi.org/10.1109/tns.2018.2802205
Publikováno v:
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::421c7bfa328d69236fc781658773a8d3
https://doi.org/10.1109/radecs47380.2019.9745679
https://doi.org/10.1109/radecs47380.2019.9745679
Autor:
E. Emin, A. Zvyagin, A. Skorobogatov, Maxim S. Gorbunov, P. Chernyakov, Anton O. Balbekov, A. Shnaider Khazanova, Igor A. Danilov
Publikováno v:
2019 IEEE 31st International Conference on Microelectronics (MIEL).
We present a comparative analysis of the layout-aware fault injection simulation results for Direct Memory Access (DMA) controllers with local, distributed, global and block Triple Modular Redundancy (TMR). The applied technique is also presented.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b74b50c50ed550ac0e046dbe30c2948
https://doi.org/10.1109/miel.2019.8889643
https://doi.org/10.1109/miel.2019.8889643
Autor:
Anton O. Balbekov
Publikováno v:
2018 Moscow Workshop on Electronic and Networking Technologies (MWENT).
This paper reports about an application of our technique to the actual design procedure of the single event effect tolerant 65nm SRAM and register file cells, which are based on DICE and 6T cells. The technique is integrated to a design flow, accepte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b06646e836ce008ece8ee7c0a624346
https://doi.org/10.1109/mwent.2018.8337197
https://doi.org/10.1109/mwent.2018.8337197
Publikováno v:
2017 IEEE 30th International Conference on Microelectronics (MIEL).
We present the simulation results comparing the upset sensitivity of different types of the majority voters. We conducted the SPICE-level simulations by means of the proposed technique that provides layout-aware analysis taking into account diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb801f44cef411325d492de218697760
https://doi.org/10.1109/miel.2017.8190133
https://doi.org/10.1109/miel.2017.8190133
Publikováno v:
SPIE Proceedings.
Single Event Transient (SET) caused by charged particle traveling through the sensitive volume of integral circuit (IC) may lead to different errors in digital circuits in some cases. In technologies below 180 nm, a single particle can affect multipl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2beeb2e5c0c639f0915fd63ec261d080
https://doi.org/10.1117/12.2266880
https://doi.org/10.1117/12.2266880
Autor:
Alexandra I. Shnaider, Igor A. Danilov, Maxim S. Gorbunov, S. G. Bobkov, Yuri B. Rogatkin, Anton O. Balbekov
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Muller C-element is one of the main parts of an asynchronous circuit. Being sequential by its nature, it is vulnerable to single event upsets (SEU). We propose three 65 nm CMOS circuit implementations of SEU tolerant C-element, whose tolerance is ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dbac980a351580ca2bf1ac0099bc0cb
https://doi.org/10.1109/radecs.2016.8093145
https://doi.org/10.1109/radecs.2016.8093145
Autor:
Maxim S. Gorbunov, Anton O. Balbekov
The paper presents an estimation technique for single event transient (SET) tolerance of combinational circuits. Technique provides means to analyze each node contribution to the overall SET tolerance of circuit. A software tool calculates critical c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b054cf5ca6c5e899ab82671b0d35e1f
