Zobrazeno 1 - 2
of 2
pro vyhledávání: '"A. Notargiacomo (1)"'
Autor:
G. Ciasca (1, L. Businaro (1), A. De Ninno (1), A. Cedola (1), A. Notargiacomo (1), G. Campi (2), M. Papi (3), A. Ranieri (2), S. Carta (1), E. Giovine (1), A. Gerardino (1)
Publikováno v:
Microelectronic engineering 111 (2013): 304–309. doi:10.1016/j.mee.2013.02.020
info:cnr-pdr/source/autori:G. Ciasca (1,3), L. Businaro (1), A. De Ninno (1), A. Cedola (1), A. Notargiacomo (1), G. Campi (2), M. Papi (3), A. Ranieri (2), S. Carta (1), E. Giovine (1), A. Gerardino (1)/titolo:Wet sample confinement by superhydrophobic patterned surfaces for combined X-ray fluorescence and X-ray phase contrast imaging/doi:10.1016%2Fj.mee.2013.02.020/rivista:Microelectronic engineering/anno:2013/pagina_da:304/pagina_a:309/intervallo_pagine:304–309/volume:111
info:cnr-pdr/source/autori:G. Ciasca (1,3), L. Businaro (1), A. De Ninno (1), A. Cedola (1), A. Notargiacomo (1), G. Campi (2), M. Papi (3), A. Ranieri (2), S. Carta (1), E. Giovine (1), A. Gerardino (1)/titolo:Wet sample confinement by superhydrophobic patterned surfaces for combined X-ray fluorescence and X-ray phase contrast imaging/doi:10.1016%2Fj.mee.2013.02.020/rivista:Microelectronic engineering/anno:2013/pagina_da:304/pagina_a:309/intervallo_pagine:304–309/volume:111
In this work we propose a wet sample handling technique which enables the simultaneous collection of X-ray fluorescence (XRF) spectra and X-ray phase contrast imaging (XPCI) using a few microliters drop confined on a superhydrophobic surface. To this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::781c5982e88fb52d9dcd37b8ffb2325e
http://www.cnr.it/prodotto/i/257131
http://www.cnr.it/prodotto/i/257131
Autor:
G. Frucci (1), L. Di Gaspare (1), A. Notargiacomo (1), D. Spirito (1), F. Evangelisti (2), A. Di Gaspare (2), E. Giovine (2)
Publikováno v:
9th IEEE Conference on Nanotechnology (IEEE-NANO), pp. 190–193, Genoa, ITALY, JUL 26-30, 2009
info:cnr-pdr/source/autori:G. Frucci (1), L. Di Gaspare (1), A. Notargiacomo (1), D. Spirito (1), F. Evangelisti (2), A. Di Gaspare (2), E. Giovine (2)/congresso_nome:9th IEEE Conference on Nanotechnology (IEEE-NANO)/congresso_luogo:Genoa, ITALY/congresso_data:JUL 26-30, 2009/anno:2009/pagina_da:190/pagina_a:193/intervallo_pagine:190–193
info:cnr-pdr/source/autori:G. Frucci (1), L. Di Gaspare (1), A. Notargiacomo (1), D. Spirito (1), F. Evangelisti (2), A. Di Gaspare (2), E. Giovine (2)/congresso_nome:9th IEEE Conference on Nanotechnology (IEEE-NANO)/congresso_luogo:Genoa, ITALY/congresso_data:JUL 26-30, 2009/anno:2009/pagina_da:190/pagina_a:193/intervallo_pagine:190–193
We present a study of the conductance of quantum point contacts fabricated in AlGaN/GaN and Si/SiGe heterostructures. The investigated devices differ for typology (split gates and etched devices, respectively) and for the resulting potential profiles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::0b80f5465dd213b0e33482b1defa7ee7
https://publications.cnr.it/doc/260693
https://publications.cnr.it/doc/260693