Zobrazeno 1 - 7
of 7
pro vyhledávání: '"A. N. Zyuganov"'
Publikováno v:
Physica Status Solidi (a). 43:333-341
The effect of diffusion on the analytical representation of current–voltage characteristics is considered in all single-carrier injection regimes being characterized by the essential predominance of the transit current component over the diffusion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1ae801a1b20eaaec31b8146ccae789e
https://doi.org/10.1002/pssa.2210430138
https://doi.org/10.1002/pssa.2210430138
Publikováno v:
Physica Status Solidi (a). 45:631-638
A diffusionless theory of the static and small-signal dynamic characteristics of quasi-monopolar semiconductors in the regime of contact emission limited current is proposed. The steady current characteristics specify the specific regularity of the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfaa6bc1a1d10cf83c3968f93f739d98
https://doi.org/10.1002/pssa.2210450236
https://doi.org/10.1002/pssa.2210450236
Publikováno v:
Soviet Physics Journal. 24:136-139
The current-voltage characteristics of ZnSe single crystals were investgated. These characteristics for a metal-semiconductor-metal structure are interpreted with allowance for the influence of the finite injection capacity of the contact. The genera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f22f5a27e221c590634d870a8d79b5f
https://doi.org/10.1007/bf00895359
https://doi.org/10.1007/bf00895359
Autor:
A. N. Zyuganov, L. V. Piskanovskii, V. N. Mikhelashvili, G. D. Bagratishvili, D. Jishiashvili, Petro Smertenko, R. B. Dzhanelidze
Publikováno v:
Physica Status Solidi (a). 65:701-707
Current-voltage (I–U) curves of the AlGe3N4GaAs strueture are studied depending on the heat treatment conditions. The mechanism of the charge flow through the metal-insulator-semiconductor (MIS) structure is revealed. The contact system parameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39500a97c3f35483cf6e2af0d868420c
https://doi.org/10.1002/pssa.2210650237
https://doi.org/10.1002/pssa.2210650237
Publikováno v:
Physica Status Solidi (b). 44:85-95
An undiffused theory of the static current-voltage characteristics of photosensitive semiconductors is proposed within the limits of the two-level band scheme which is usual for such materials. The analysis of I-U characteristics permits the determin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fec6459536bc65297b7590da41e29f59
https://doi.org/10.1002/pssb.2220440108
https://doi.org/10.1002/pssb.2220440108
Autor:
G. D. Bagratishvili, R. B. Dzhanelidze, D. A. Jishiashvili, L. V. Piskanovskii, A. N. Zyuganov, V. N. Mikhelashvili, P. S. Smertenko
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bccb0c2f6880e281bfaf0338992626b5
https://doi.org/10.1515/9783112492925-036
https://doi.org/10.1515/9783112492925-036
