Zobrazeno 1 - 10
of 53
pro vyhledávání: '"A. N. Yurkov"'
Publikováno v:
Semiconductors. 55:S22-S29
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a34f1fad131d87ec6a3cc40bbad73d
https://doi.org/10.1134/s1063782621060142
https://doi.org/10.1134/s1063782621060142
High-Power Schottky Diodes with a Negative-Differential-Resistance Portion in the I–V Characteristic
Publikováno v:
Semiconductors. 55:92-99
It is shown that, in the base region of Schottky diodes, at current densities j higher than a certain value jst1, quasi-neutral drift-stimulated diffusion is implemented along with diffusion transport. The effect of this newly discovered mode in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c4ca3a8da7e180408d138b96e8eb3a0
https://doi.org/10.1134/s1063782621010164
https://doi.org/10.1134/s1063782621010164
Publikováno v:
Semiconductors. 54:567-574
The effect of a set of quasi-neutral regimes of carrier transport in semiconductors, including, along with diffusion and drift, recently discovered diffusion stimulated by quasi-neutral drift, on the characteristics of structures is successively take
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f98154805023869a5834506d7998d05
https://doi.org/10.1134/s1063782620050152
https://doi.org/10.1134/s1063782620050152
Publikováno v:
Semiconductors. 54:112-116
The procedure making it possible to take into account the influence of high-power thyristor design elements on its dU/dt parameter is described. A simple model is proposed, using which, it is possible to find the parameters of the auxiliary thyristor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3383ebf441bd41265467d119c894e240
https://doi.org/10.1134/s1063782620010273
https://doi.org/10.1134/s1063782620010273
Autor:
A. Astafyev, S. Gerashchenko, N. Yurkov, N. Goryachev, I. Kochegarov, A. Smolarz, E. Łukasik, M. Kalimoldayev
Publikováno v:
Information Technology in Medical Diagnostics III ISBN: 9781003167662
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b13df54b170220aaff92346add4afce9
https://doi.org/10.1201/9781003167662-6
https://doi.org/10.1201/9781003167662-6
Publikováno v:
Technical Physics. 63:1497-1503
On the basis of numerical simulation, specificities of the effect of dU/dt in 4H–SiC thyristor structures, related to realization of the recently discovered triggering α-mechanism are analyzed. It is shown that one of the manifestations of this me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60a6278d922451c9f2ebcf9d8dc29f88
https://doi.org/10.1134/s1063784218100250
https://doi.org/10.1134/s1063784218100250
Publikováno v:
Semiconductors. 51:1081-1086
An analytical expression is derived for the current–voltage characteristic of a Schottky diode at a high injection level of minority carriers. It is shown that, even at very high current densities, the higher the base doping level, the larger the v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fce13d82dc721d09d815690ccb39b9b
https://doi.org/10.1134/s1063782617080231
https://doi.org/10.1134/s1063782617080231
Publikováno v:
Semiconductors. 51:225-231
The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4H-SiC thyristors results in the depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dea903568bc8a9bbcb0d320e2c4c860
https://doi.org/10.1134/s1063782617020257
https://doi.org/10.1134/s1063782617020257
Publikováno v:
Solid-State Electronics. 121:41-46
Transport phenomena in Schottky diodes are analyzed at high injection levels of minority carriers. It is shown that the correct description of these phenomena requires that the mode of diffusion stimulated by the quasi-neutral drift (DSQD) should be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fedebfdf33559e28e25532c8e4c2199a
https://doi.org/10.1016/j.sse.2016.04.004
https://doi.org/10.1016/j.sse.2016.04.004
Publikováno v:
Semiconductors. 47:327-334
It is shown that violation of quasi-neutrality and its subsequent recovery (with an increase in the current density) may occur in doped n layers of p+-n-n+ structures under double injection at a high injection level and for a certain combination of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f6ff8822ba4e4d374716cb7fe216321
https://doi.org/10.1134/s1063782613030172
https://doi.org/10.1134/s1063782613030172