Zobrazeno 1 - 10
of 19
pro vyhledávání: '"A. N. M. Masum Choudhury"'
Autor:
Moshe Oron, A. N. M. Masum Choudhury, Ariela Donval, Tom R. Stanczyk, Dean Richardson, Ram Oron
Publikováno v:
SPIE Proceedings.
Waveguides fabricated in high-index-contrast material systems offer very strong light confinement compared to that achieved in low-index-contrast material systems. A core layer of silicon (refractive index n~3.5) surrounded by silica cladding (n~1.5)
Publikováno v:
Proceedings of LEOS'94.
Photonic switching, when integrated with the optoelectronic circuit elements required for routing control and optical signal conditioning, is of interest for network reconfiguration, high-speed LANs, and optical cross-connects. The adiabatic modal ev
Publikováno v:
Applied Physics Letters. 58:325-327
A high frequency, low dark current, 1.3 μm metal‐semiconductor‐metal photodetector on GaAs is reported. The measured frequency response of this photodetector up to 10 GHz agrees with a model that assumes different collection times for electrons
Autor:
W. Powazinik, R. Bryant, W. H. Nelson, Edmund Meland, A. N. M. Masum Choudhury, M. Abdalla, W. Niland
Publikováno v:
Conference on Optical Fiber Communication.
Photonic switching is of interest for network reconfiguration, high-speed LANs, and optical cross connects.1-3 The adiabatic- modal-evolution, asymmetric digital optical switch (DOS) is a promising candidate for these applications. It can operate ind
Autor:
R. Bryant, W. Powazinik, Edmund Meland, M. Abdalla, A. N. M. Masum Choudhury, W. Niland, W. H. Nelson
Publikováno v:
Integrated Photonics Research.
Photonic switching, when integrated with the optoelectronic circuit elements required for routing control and optical signal conditioning, is of interest for network reconfiguration, highspeed LANs, and optical cross-connects [l]-[4]. The adiabatic m
Publikováno v:
Integrated Photonics Research.
The development of monolithic optoelectronic integrated circuits (OEICs) are of considerable interest because these components are expected to offer increased reliability, lower cost, and higher speed than their hybrid counterparts. Of particular int
Publikováno v:
Optical Society of America Annual Meeting.
A novel super-lattice enhanced InGaAs/GaAs interdigitated-metal-semiconductor-metal (IMSM) photodetector structure operating at 1.3 μm has been realized. The structure is stable after high temperature rapid thermal annealing, thus offering the poten
Publikováno v:
Journal of The Electrochemical Society. 134:2631-2634
Autor:
K. Tabatabaie-Alavi, A. N. M. Masum Choudhury, A. Y. Cho, Kambiz Alavi, W. Rowe, Clifton G. Fonstad
Publikováno v:
Journal of Applied Physics. 54:4374-4377
Electrical characterization of (Al,In)As ion implanted with Be and Si following low and high dose multiple energy implant schedules, and annealed between 740 and 815 °C with a pyrolytic silicon dioxide cap is reported. Only very low activation of Be
Autor:
Moshe Oren, A. N. M. Masum Choudhury
Publikováno v:
Journal of The Electrochemical Society. 134:750-752