Zobrazeno 1 - 10
of 55
pro vyhledávání: '"A. N. Krivonosov"'
Publikováno v:
Vestnik Samarskogo Gosudarstvennogo Tehničeskogo Universiteta. Seriâ: Fiziko-Matematičeskie Nauki, Vol 21, Iss 4, Pp 633-650 (2017)
In this paper we study spaces of conformal torsion-free connection of dimension 4 whose connection matrix satisfies the Yang-Mills equations. Here we generalize and strengthen the results obtained by us in previous articles, where the angular metric
Externí odkaz:
https://doaj.org/article/1a120e971ba2435394b64db87682ccd8
Autor:
L. N. Krivonosov, V. A. Luk’yanov
Publikováno v:
Russian Mathematics. 66:33-45
Publikováno v:
Semiconductors. 56:153-159
Publikováno v:
Semiconductors. 56:145-152
Publikováno v:
Vestnik Samarskogo Gosudarstvennogo Tehničeskogo Universiteta. Seriâ: Fiziko-Matematičeskie Nauki, Vol 19, Iss 3, Pp 462-473 (2015)
Previously, we found the complete solution of Yang-Mills equations for a centrally symmetric metric in 4-dimensional space of conformal torsion-free connection in the absence of the electromagnetic field. Later, in another article, we found a soluti
Externí odkaz:
https://doaj.org/article/8de9a49d66d04e68b056665eb90a54f3
Publikováno v:
Vestnik Samarskogo Gosudarstvennogo Tehničeskogo Universiteta. Seriâ: Fiziko-Matematičeskie Nauki, Vol 18, Iss 2, Pp 180-198 (2014)
We calculated basic gauge-invariant tensors algebraically expressed through the matrix of conformal curvature. In particular, decomposition of the main tensor into gaugeinvariant irreducible summands consists of 4 terms, one of which is determined by
Externí odkaz:
https://doaj.org/article/47d5b65a1f5148d8bd903226b4c6f352
Publikováno v:
Semiconductors. 55:476-481
Publikováno v:
Semiconductors. 55:162-167
The high-power picosecond optical pumping of a thin GaAs layer generates intense picosecond stimulated emission. The emission spectrum is a light continuum. Based on the results of previous experimental work, the following is carried out. (a) The amp
Publikováno v:
Semiconductors. 55:154-161
The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative
Publikováno v:
Semiconductors. 54:1205-1214
It is shown that modulation of the spectrum of stimulated picosecond emission generated in an AlxGa1 – xAs–GaAs–AlxGa1 – xAs waveguide heterostructure upon the optical pumping of GaAs, as well as a number of previous experimental results, can