Zobrazeno 1 - 10
of 12
pro vyhledávání: '"A. N. Krit"'
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:680-683
The structural features of the silicon surface–Saccharomyces cerevisiae yeast suspended in ethanol system, which emerge in weak magnetic fields, are considered in this paper. It is assumed that these features arise from the electrostatic interactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96f6c62c3212a8f6489c5b94066c671b
https://doi.org/10.1134/s1027451017030387
https://doi.org/10.1134/s1027451017030387
Autor:
L. P. Steblenko, D. V. Kalinichenko, Yu. L. Kobzar, Andrey Yakunov, A. N. Kuryliuk, A. N. Krit, A. I. Nigelska, S. N. Naumenko
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:280-284
The evolution of a Saccharomyces cerevisiae suspension deposited onto the surface of silicon is investigated. Evolution of the yeast is caused by the effect of a weak stationary magnetic field (B = 0.17 T) and low-energy (E = 8 keV) low-dose (D = 104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f1cb480038af5f41985bdf7cfc6466
https://doi.org/10.1134/s1027451016050414
https://doi.org/10.1134/s1027451016050414
Autor:
A. N. Krit, A. B. Nadtochiy, L. P. Steblenko, S. N. Naumenko, Yu. L. Kobzar, A. N. Kuryliuk, D. V. Kalinichenko, A. A. Podolyan
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:672-675
We study the kinetics of the photovoltage decay in silicon crystals, caused by the effect of lowenergy (E = 8 keV) X-ray radiation. A correlation between radiation-induced changes in the short-term and long-term components of the photovoltage decay a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31f25b1fb284b4861edb8fb8bf3fd214
https://doi.org/10.1134/s1027451016020361
https://doi.org/10.1134/s1027451016020361
Autor:
L. P. Steblenko, A. A. Podolyan, A. B. Nadtochiy, A. N. Kuryliuk, D. V. Kalinichenko, Yu. L. Kobzar, A. N. Krit, S. N. Naumenko
Publikováno v:
Поверхность. Рентгеновские, синхротронные и нейтронные исследования. :108-112
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95febc0e5e0c6c705bbfde2c50ed10ac
https://doi.org/10.7868/s020735281604017x
https://doi.org/10.7868/s020735281604017x
Autor:
O. N. Krit, A. N. Kurylyuk, P. P. Kogutyuk, S. N. Naumenko, Yu. L. Kobzar, D. V. Kalinichenko, L. P. Steblenko
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:957-960
Features of changes in the microhardness of nand p-type Si crystals exposed to low-energy X-ray radiation (E = 8 keV) at low doses (D = 1.8 × 103 to 3 × 104 Gy) are studied. The changes are classified as a radiation–mechanical effect and depend o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8fc492bc73e4e1c4a52dca674adb7b5
https://doi.org/10.1134/s1027451015030349
https://doi.org/10.1134/s1027451015030349
Role of migration barriers in the dynamic behavior of short surface dislocations in silicon crystals
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:646-650
The influence of migration barriers on the mobility of short surface dislocations (length L of ≤100 μm) in Si crystals is analyzed in this paper. The dependence of the migration barrier on the diffusion coefficient of impurities that are dominant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::696b34c1fc3cc71326f53010d34aa61a
https://doi.org/10.1134/s1027451015030295
https://doi.org/10.1134/s1027451015030295
Autor:
A. A. Podolyan, V. N. Kravchenko, A. N. Kuryliuk, S. N. Naumenko, L. A. Voronzova, A. N. Krit, L. N. Yashchenko, L. P. Steblenko, D. V. Kalinichenko, Yu. L. Kobzar
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319562445
The effect of soft X-rays with photon energy W = 8 keV on the kinetics of decay photovoltage in solar silicon crystals is studied. The correlation between the radiation-stimulated change in the electrical characteristics of the investigated crystals
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::376015448425bbe40a18e13e71e54ec7
https://doi.org/10.1007/978-3-319-56422-7_20
https://doi.org/10.1007/978-3-319-56422-7_20
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 8:1182-1185
The influence of impurity atmospheres on the mobility and shape of short surface dislocations (with a length of L ≤ 100 μm) in Si crystals is considered in this paper. The difference between the evolution of impurity atmospheres in the vicinity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95f90a682355d461c388a8878f883b4c
https://doi.org/10.1134/s1027451014060093
https://doi.org/10.1134/s1027451014060093
Autor:
V. A. Makara, I. V. Plyushchai, D. V. Kalinichenko, S. N. Naumenko, A. N. Krit, A. N. Kurylyuk, L. P. Steblenko
Publikováno v:
Physics of the Solid State. 56:1582-1589
The possibility of magnetic ordering at dangling bonds in dislocation cores has been investigated theoretically. It has been experimentally shown that magnetic ordering in dislocations affects the spin-dependent effects occurring in dislocation cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c7ef8123bf2b5a09f22f8668e2c7b78
https://doi.org/10.1134/s1063783414080174
https://doi.org/10.1134/s1063783414080174
Autor:
L. P. Steblenko, S. N. Naumenko, Yu. L. Kobzar, A. N. Krit, A. B. Nadtochiy, D. V. Kalinichenko, V. A. Makara, O. A. Korotchenkov, A. N. Kuryliuk
Publikováno v:
Semiconductors. 48:722-726
The effect of a weak permanent magnetic field on the structure and charge state of silicon for solar-power engineering is investigated. It is revealed that magnetostimulated changes in the defect-impurity state and surface potential have a reversible
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2519fa060db824317d7c2b1a5631b022
https://doi.org/10.1134/s1063782614060189
https://doi.org/10.1134/s1063782614060189