Zobrazeno 1 - 10
of 17
pro vyhledávání: '"A. N. Korshak"'
Publikováno v:
Journal of Applied Physics. 87:7466-7475
We consider p+pp+ diodes, in which the middle p region (base) consists of a p-type quantum well current-conducting channel that is controlled by a gate potential. Hole concentrations in the channel are assumed to be such that a ballistic current flow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e389951c4a05eea7f79fbf61be827e6
https://doi.org/10.1063/1.373011
https://doi.org/10.1063/1.373011
Publikováno v:
Superlattices and Microstructures. 27:105-109
We consider a ballistic field-effect transistor with channel current carriers having a negative effective mass section in their dispersion relation. Such a device is suggested as an effective generator of terahertz-range oscillations. A gate potentia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d582370cd0ffddab4e1169e8aabb1dbb
https://doi.org/10.1006/spmi.1999.0808
https://doi.org/10.1006/spmi.1999.0808
Publikováno v:
International Journal of Infrared and Millimeter Waves. 20:213-237
The dispersion relation for the ground subband of quantized holes in a quantum well (QW) of zink-blende-like semiconductors contains an extensive section with negative effective mass (NEM). Under certain biases, stationary concentration distributions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9657a8c00e9849e9c5b92e820cfbc225
https://doi.org/10.1023/a:1021763703574
https://doi.org/10.1023/a:1021763703574
Publikováno v:
Microelectronic Engineering. :445-451
A space–charge limited ballistic current of quantized holes in a short doped p-GaAs quantum well generates current oscillations. This generation is a result of a negative effective mass region in the hole dispersion relation. An oscillation frequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::462a280fe976462da41e2ffc7541bd89
https://doi.org/10.1016/s0167-9317(98)00204-4
https://doi.org/10.1016/s0167-9317(98)00204-4
Publikováno v:
Superlattices and Microstructures. 23:261-264
A dispersion relation e ( q ) is derived for electrons in a planar superlattice constructed in the form of a quantum well that is coupled by tunneling with a periodic array of parallel strip-shaped quantum wires. A narrow miniband inside of the subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ec80029b42ea4eada9eeb4a3925f2dd
https://doi.org/10.1006/spmi.1996.0341
https://doi.org/10.1006/spmi.1996.0341
Publikováno v:
Journal of Applied Physics. 83:1481-1490
We consider space charge limited ballistic electron transport in short current-conducting channels formed by single and double quantum well segments. Independent contacts to the bottom-well and the top-well forming the double quantum well segment is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfd3a7df7bab5d0367e14afd9cd666ca
https://doi.org/10.1063/1.366854
https://doi.org/10.1063/1.366854
Publikováno v:
Semiconductors. 31:150-160
The oscillations of the ballistic hole current through a thin base of a p+pp+ diode compressed uniaxially in the direction of the current are investigated theoretically. As a result of compression, the hole dispersion relation contains sections with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a19e5bd732b70a377562ac7e507d22b5
https://doi.org/10.1134/1.1187098
https://doi.org/10.1134/1.1187098
Publikováno v:
Journal of Applied Physics. 80:5799-5808
It is shown that the stationary distribution of ballistic current carriers moving across a thin doped base is unstable if there exists a negative effective mass (NEM) part in the carrier dispersion law. Under such a condition, a regime with a quasist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7d1cc9995d2d4e538a450d332eb01b5
https://doi.org/10.1063/1.363572
https://doi.org/10.1063/1.363572
Publikováno v:
Solid-State Electronics. 39:915-922
If a gate current is smaller than some critical value required for the complete turn-off of an anode current in a p + npn + -structure it produces the stationary squeeze of current-conducting region (CCR) and increase of the current density in it. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1a31c3f49097acd21712762981ce9ff
https://doi.org/10.1016/0038-1101(95)00270-7
https://doi.org/10.1016/0038-1101(95)00270-7
Publikováno v:
Applied Physics Letters. 75:2292-2294
We consider gate control of terahertz generation in planar ballistic diodes with a negative-effective-mass section in a dispersion relation of current carriers in a current-conducting channel. Such a generation in ballistic p+pp+ or n+nn+ diodes occu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4637300a584781b862f2315cf30277
https://doi.org/10.1063/1.124994
https://doi.org/10.1063/1.124994