Zobrazeno 1 - 10
of 22
pro vyhledávání: '"A. N. Beltyukov"'
Autor:
Alexander S. Lenshin, Pavel V. Seredin, Dmitry S. Zolotukhin, Artemy N. Beltyukov, Andrey M. Mizerov, Igor A. Kasatkin, Ali O. Radam, Evelina P. Domashevskaya
Publikováno v:
Конденсированные среды и межфазные границы, Vol 24, Iss 1 (2022)
In this work, we studied the efficiency of introducing nanoporous silicon as a buffer layer in the growth of AlxGa1–xN/AlN/Si(111) on a single-crystal silicon by molecular beam growth technology. We also considered its influence on the morphologica
Externí odkaz:
https://doaj.org/article/63da53408835448f8cbd92efc1403afd
Autor:
I. Pankov, V. Anikin, N. Beltyukov, A. Evseev, V. Kuzminykh, I. Lomakin, I. Morozov, V. Toksarov, A. Udartsev
Publikováno v:
Perm Scientific Center Journal. :14-24
Autor:
S. N. Timoshnev, H. Leiste, Pavel Seredin, A. M. Mizerov, S. A. Kukushkin, A. S. Lenshin, D. S. Zolotukhin, I. N. Arsentyev, Yu. Yu. Khudyakov, A. N. Beltyukov, Dmitry Goloshchapov
Publikováno v:
Semiconductors. 54:596-608
A set of structural and spectroscopic methods of diagnostics is used to study the influence of a nanoporous silicon (por-Si) transition layer on the practical implementation and specific features of growth of GaN layers on SiC/por-Si/c-Si templates b
Autor:
F. F. Chausov, N. V. Lomova, Nikolay V. Somov, V. G. Petrov, D. K. Zhirov, M. A. Shumilova, A. N. Beltyukov
Publikováno v:
Crystallography Reports. 65:233-241
A sodium salt of the complex of nitrilo-tris(methylenephosphonic) (NTP) acid with Mn(II) (Na4[MnII{N(CH2PO3)3}] · 13H2O, sp. gr. P$$\bar {1}$$, Z = 2, a = 11.2146(4) A, b = 11.2687(4) A, c = 12.4625(4) A, α = 108.619(3)°, β = 97.149(3)°, γ = 11
Autor:
D. S. Zolotukhin, I. N. Arsentyev, A. S. Lenshin, A. M. Mizerov, Dmitry Goloshchapov, Pavel Seredin, A. N. Beltyukov
Publikováno v:
Semiconductors. 53:993-999
The influence of using a buffer sublayer of nanoporous por-Si on the morphological, physical, and structural properties of nanocolumnar InxGa1 –xN structures fabricated by plasma-activated molecular-beam epitaxy on single-crystal Si(111) substrates
Autor:
Alexander L. Trigub, V. M. Vetoshkin, A. I. Chukavin, Rishat G. Valeev, A. S. Alalykin, V. V. Kriventsov, A. N. Beltyukov
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 83:169-174
The electron and local atomic structures of ZnS:Cu(Mn);Cl nanofilms obtained via vacuum thermal deposition onto porous aluminum oxide are studied by means of X-ray photoelectron spectroscopy, XANES, and EXAFS. It is established that the pore diameter
Autor:
F. F. Chausov, A. N. Beltyukov, M. A. Shumilova, D. K. Zhirov, Nikolay V. Somov, R. M. Zakirova, V. G. Petrov, N. V. Lomova, N. Yu. Isupov
Publikováno v:
Journal of Structural Chemistry. 60:81-91
Crystal hydrate of sodium salt of an oxovanadium(IV) complex with nitrilo-tris-methylenephosphonic (NTP) acid Na8[(VO)2(μ−O)2{(VO)μ3−N(CH2PO3)3}2]·20H2O is synthesized, isolated, and studied: space group P1, Z = 2, a = 12.5829(2) A, b = 13.929
Autor:
S. S. Starchikov, A. N. Beltyukov, V. M. Kanevsky, Rishat G. Valeev, A. E. Muslimov, F. Z. Gil’mutdinov, I. A. El’kin
Publikováno v:
Crystallography Reports. 63:989-993
The formation of graphene–iron composite structures on the surface of cleavages of silicon carbide single crystals using vacuum thermal destruction with simultaneous deposition of iron atoms has been investigated. The effect of the iron deposition
Autor:
A G Sobol, O. V. Boytsova, A V Chumakova, A. A. Eliseev, A. N. Beltyukov, Dmitrii I. Petukhov, A B Bosak, O A Drozhzhin
Publikováno v:
Nanotechnology. 33:055603
Here we report a successful one-step synthesis of vanadium-doped anatase mesocrystals by reactive annealing of NH4TiOF3/PEG2000 mesocrystal precursors with NH4VO3. The formation solid solution Ti1−x V x O2 with vanadium content up to x = 25 at% inh
Publikováno v:
Journal of Structural Chemistry. 58:1236-1244
Nanocomposite systems based on ternary ZnS x Se1–x semiconductor compounds with different compositions (x = 0, 0.3, 0.5, 0.7, 1) in dielectric matrices of nanoporous anodic aluminium oxide (AAO) are synthesized by high vacuum thermal evaporation of