Zobrazeno 1 - 2
of 2
pro vyhledávání: '"A. N. Bahtybayev"'
Publikováno v:
Physics of the Solid State. 55:45-53
Films of the solid solutions Si1 − xSnx (0 ≤ x ≤ 0.04) on Si substrates have been grown by liquid phase epitaxy. The structural features of the films have been investigated using X-ray diffraction. The temperature behavior of current-voltage ch
Publikováno v:
Journal of Materials Science Research. 1
Epitaxy layers of solid solution (ZnSe)1-x-y(Si2)x(GaP)y (0 х 0.03, 0 y 0.09) were grown up from the limited volume of tin solution-melting by method of liquid phase epitaxy. Profiles of distribution of components Ga, P, Zn, Se and S