Zobrazeno 1 - 10
of 1 011
pro vyhledávání: '"A. N. Anisimov"'
Autor:
I. D. Breev, Z. Shang, A. V. Poshakinskiy, H. Singh, Y. Berencén, M. Hollenbach, S. S. Nagalyuk, E. N. Mokhov, R. A. Babunts, P. G. Baranov, D. Suter, S. A. Tarasenko, G. V. Astakhov, A. N. Anisimov
Publikováno v:
npj Quantum Information, Vol 8, Iss 1, Pp 1-9 (2022)
Abstract Controllable solid-state spin qubits are currently becoming useful building blocks for applied quantum technologies. Here, we demonstrate that in a specific type of silicon-vacancy in the 6H-SiC polytype the excited-state fine structure is i
Externí odkaz:
https://doaj.org/article/774acc2478fc4c6e91fa2623d6aff422
Autor:
S. O. Podvyaznikov, A. M. Mudunov, A. V. Ignatova, D. A. Vasilkin, A. N. Anisimov, P. I. Shchennikov
Publikováno v:
Опухоли головы и шеи, Vol 10, Iss 1, Pp 73-83 (2020)
Introduction. Basal cell cancer (BCC) accounts for up to 80 % of all types of non-melanoma skin cancers. In 97 % of cases, BCC develops on bare facial skin, especially at the nose-forehead border, nose wings, corners of eyes and lips. Surgery can lea
Externí odkaz:
https://doaj.org/article/34a33d25bc5744ce907adaff1ccc3d26
Autor:
V. A. Soltamov, C. Kasper, A. V. Poshakinskiy, A. N. Anisimov, E. N. Mokhov, A. Sperlich, S. A. Tarasenko, P. G. Baranov, G. V. Astakhov, V. Dyakonov
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
High-dimensional quantum bits advance the application of quantum sensing and information processing technologies but suffer from the low spectral selectivity and working temperature. Here the authors present the selective excitation and control of sp
Externí odkaz:
https://doaj.org/article/70932bd2b11a4a70b7f8c309236815f6
Autor:
A. N. Anisimov, V. A. Soltamov, I. D. Breev, R. A. Babunts, E. N. Mokhov, G. V. Astakhov, V. Dyakonov, D. R. Yakovlev, D. Suter, P. G. Baranov
Publikováno v:
AIP Advances, Vol 8, Iss 8, Pp 085304-085304-6 (2018)
All-optical thermometry technique based on the energy level cross-relaxation in atomic-scale spin centers in SiC is demonstrated. This technique exploits a giant thermal shift of the zero-field splitting for centers in the triplet ground state, S=1,
Externí odkaz:
https://doaj.org/article/257b574ce3fc405cb14ff95f9eb844d2
Autor:
A. N. Anisimov, A. I. Chromov
Publikováno v:
Vestnik Samarskogo Gosudarstvennogo Tehničeskogo Universiteta. Seriâ: Fiziko-Matematičeskie Nauki, Vol 1(14), Pp 44-49 (2007)
The problem of wedge intrusion in the half-space was considered by R. Hill, E. Lie, and S. Tupper under the Mises yield criterion and Tresca yield criterion. In this case the perfect plastico-rigid body is incompressible. Under the Coulomb–Mohr yie
Externí odkaz:
https://doaj.org/article/9c9c180efada42339682069b06c21ab1
Autor:
D. Simin, V. A. Soltamov, A. V. Poshakinskiy, A. N. Anisimov, R. A. Babunts, D. O. Tolmachev, E. N. Mokhov, M. Trupke, S. A. Tarasenko, A. Sperlich, P. G. Baranov, V. Dyakonov, G. V. Astakhov
Publikováno v:
Physical Review X, Vol 6, Iss 3, p 031014 (2016)
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-^{28}SiC) and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. Thes
Externí odkaz:
https://doaj.org/article/0f84200643cd43538a74f1af952ab49c
Autor:
Yu. A. Gorinov, P. N. Anisimov
Publikováno v:
Известия высших учебных заведений: Проблемы энергетики, Vol 24, Iss 3, Pp 101-111 (2022)
The PURPOSE of the study is to improve the efficiency of district heating systems. To achieve this purpose, the following tasks must be completed. To consider the problems of functioning of an open heat supply system functioning. Perform an analysis
Externí odkaz:
https://doaj.org/article/c0375a7780fb47a58b30b8085ce7a387
Publikováno v:
Steel in Translation. 52:1149-1153
Autor:
R. A. Babunts, Yu. A. Uspenskaya, A. P. Bundakova, G. V. Mamin, A. N. Anisimov, P. G. Baranov
Publikováno v:
JETP Letters. 116:785-790
Autor:
K. V. Likhachev, I. D. Breev, S. V. Kidalov, P. G. Baranov, S. S. Nagalyuk, A. V. Ankudinov, A. N. Anisimov
Publikováno v:
JETP Letters. 116:840-845
We fabricate a quantum magnetic field sensor based on the silicon vacancy centers in 6H–SiC using atomic force microscopy technique. The quantum sensing is based on optically detected magnetic resonance. To implement quantum scanning microscopy, we