Ovarian Preservation in Premenopausal Patients With Endometriosis

Autor: N. Agarwala

Publikováno v: Journal of minimally invasive gynecology. 22(6S)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e61a0663d563341c03fdac45b96ee9e8
https://pubmed.ncbi.nlm.nih.gov/27678961

Electromigration in sub-micron Copper Interconnects in Low-k Dielectrics

Autor: Clevenger Lawrence A, James J. Demarest, Kaushik Chanda, Birendra N. Agarwala, Chao-Kun Hu, Du B. Nguyen, Chih-Chao Yang, Paul S. McLaughlin, H. S. Rathore

Publikováno v: ECS Transactions. 1:77-91

In the advanced on-chip interconnect Technology, the interconnect reliability has been a subject of utmost importance. As the line width is reduced to the sub -micron range, the current carrying capability of the Cu interconnect lines becomes an impo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9376e3cd4aec012353f09a0ecdf5a63
https://doi.org/10.1149/1.2218480

Widow remarriages in some rural areas of Northern India

Autor: S. N. Agarwala

Publikováno v: Demography. 4(1)

Summary It is commonly believed thai widows belonging to high-caste Hindus in India do not remarry because of various social restrictions imposed on their remarriage. Though some information on widowhood and widow remarriages is available, there is n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6570ae116a891cdc6372b5c2fb20be96
https://pubmed.ncbi.nlm.nih.gov/21279767

Extendibility of PVD barrier/seed for BEOL Cu metallization

Autor: Terry A. Spooner, Kaushik Chanda, Birendra N. Agarwala, Timothy J. Dalton, Jason Gill, Edward C. Cooney, C.-C. Yang, Daniel C. Edelstein, Clevenger Leigh Anne H, Andy Cowley, A. Simon, A.K. Stamper, Du Binh Nguyen

Publikováno v: Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..

The paper describes a new physical vapor deposition (PVD) metallization scheme that shows a better extendibility for future technology nodes as compared to the conventional scheme. In addition to reducing the thicknesses of both the diffusion barrier

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5e3d7de4aec2387e3f07b927fcd85003
https://doi.org/10.1109/iitc.2005.1499954

Comprehensive reliability evaluation of a 90 nm CMOS technology with Cu/PECVD low-k BEOL

Autor: J. Wright, X.-H. Liu, Christopher D. Muzzy, Swastika N. Das, Birendra N. Agarwala, T. Van Kleeck, Jason Gill, M. Ono, W. Wille, Stephen M. Gates, Ann Swift, Jeremy L. Martin, C. Parks, Philip L. Flaitz, Yanfeng Wang, M. Yoon, Kaushik Chanda, S. Vogt, William F. Landers, W.-K. Li, F. Chen, K. Ida, E.G. Liniger, David L. Questad, A. Cowley, T. Ivers, A. Carbone, T. Shaw, D. Klaus, S. Nguyen, Y.-H. Lin, James J. Demarest, Daniel C. Edelstein, John A. Fitzsimmons, Andrew H. Simon, S. Molis, T. Nogami, D. Nguyen, Timothy J. Dalton, P. Davis, S. Arai, E. Simonyi, J. Lee, R. G. Filippi, Darryl D. Restaino, Chester T. Dziobkowski, Stephan A. Cohen, Michael Lane, D. Hawken, Charles R. Davis, W. Cote, A. Sakamoto, Sandra G. Malhotra, Chih-Chao Yang, Derren N. Dunn, N. Klymko, M. Cullinan, Larry Clevenger, S. Lane, Y. Shimooka, A. Madan, Hazara S. Rathore, Alfred Grill

Publikováno v: 2004 IEEE International Reliability Physics Symposium. Proceedings.

Integration and development of Cu Back-End of Line (BEOL) with PECVD low-k organosilicate glass (OSG, also called SiCOH, carbon-doped oxide, CDO, etc.) for 130 nm and 90 nm CMOS technologies has been reported by a number of institutions. Here we repo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::044c9de7d72a4a118b86c5b5bb31a71f
https://doi.org/10.1109/relphy.2004.1315344