Zobrazeno 1 - 10 of 20 pro vyhledávání: '"A. Mohades-Kassai"'
1
Evolution of Orchestration towards 5G
Autor: Saptarshi Ghosh, A Dagiuklas, S K Mohades Kassai
Publikováno v: Journal of Communications. :1134-1140
Service orchestration is an essential activity in 5G networks. It performs optimal resource allocation and provisions services in an effective sequence based on demands across a collection of physical or virtual network functions (P/VNF). This paper
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b4162e8b79ea108284886fd3c73e407f
https://doi.org/10.12720/jcm.14.12.1134-1140
Zobrazit plný text záznamu
5
Reverse contrast imaging in GaAs
Autor: A. Mohades-Kassai, M.R. Brozel
Publikováno v: Journal of Crystal Growth. 103:303-310
“Reverse contrast imaging” is a technique that has been developed for imaging dislocation distributions in undoped semi-insulating LEC GaAs. This technique, which relies on the mapping of near-bandgap infrared transmission, is both rapid and non-
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f9b2dd814893ce4256a274a23ae8695
https://doi.org/10.1016/0022-0248(90)90204-x
Zobrazit plný text záznamu
6
Design and fabrication of high accuracy GaAs Hall effect sensor grown by molecular beam epitaxy
Autor: H.R. Soufi, A. Mohades-Kassai
Publikováno v: ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453).
A thin GaAs Hall effect sensor with good thermal stability has been grown by molecular beam epitaxy (MBE). This sensor transduces magnetic flux to a voltage signal. The Hall effect involves passing a current through a layer of semiconductor when a ma
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b08d782b21bf74e1fb59a9f0c964c33f
https://doi.org/10.1109/icm.2000.916474
Zobrazit plný text záznamu
7
Compensation in MBE-grown GaAs doped with silicon and beryllium
Autor: A. Mohades-Kassai
Publikováno v: ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453).
Silicon doping is the most common means of producing n-type GaAs grown by MBE. However, samples grown with an intended carrier concentration of the order of 3/spl times/10/sup 19/ cm/sup -3/ exhibit considerable self-compensation. Localized vibration
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7498b6fe3e8d57f84a9288a178a365c9
https://doi.org/10.1109/icm.2000.916473
Zobrazit plný text záznamu
8
Temperature Dependence of the Optical Absorption Edge in Indium Phosphide
Autor: Shane Johnson, Thomas Tiedje, A. J.G. DeVries, A. Mohades-Kassai, M. Beaudoin
Publikováno v: MRS Proceedings. 421
Optical bandgap thermometry is a new method for measuring the temperature of semiconductor substrates. In this method, the temperature of the substrate is inferred from the wavelength of the onset of transparency of the substrate which is a measure o
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c1d070515940d9d0c7ac14637ae1ea67
https://doi.org/10.1557/proc-421-367
Zobrazit plný text záznamu
9
Conference
Design and fabrication of high accuracy GaAs Hall effect sensor grown by molecular beam epitaxy.
Autor: Mohades-Kassai, A., Soufi, H.R.
Publikováno v: ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453); 2000, p345-348, 4p
Zobrazit plný text záznamu
10
Conference
Compensation in MBE-grown GaAs doped with silicon and beryllium.
Autor: Mohades-Kassai, A.
Publikováno v: ICM 2000. Proceedings of the 12th International Conference on Microelectronics. (IEEE Cat. No.00EX453); 2000, p341-344, 4p
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje