Zobrazeno 1 - 10
of 21
pro vyhledávání: '"A. Mesquida Kusters"'
Autor:
A. Mesquida Kusters, Michael Heuken, Th. Schäpers, D. Moulin, M. Behet, G. Engels, Hans Lüth, K. Heime
Publikováno v:
Superlattices and Microstructures. 23:307-313
InAs/InP0.69Sb0.31quantum-well structures grown by metal organic vapor-phase epitaxy are studied by temperature-dependent Hall measurements and by quantum Hall and Shubnikov de Haas effect measurements. At temperatures below 0.3 K a two-dimensional e
Autor:
K. Heime, A. Mesquida Kusters
Publikováno v:
Solid-State Electronics. 41:1159-1170
We review the design, fabrication and performance of LP-MOVPE grown Al-free InP/In x Ga 1 − x As/InP (53% ≤ x ≤ 81%) high electron mobility transistors (HEMTs) with two types of barrier-enhancement layers; (1) a lattice-matched p + -type doped
Publikováno v:
Microelectronics Journal. 27:297-334
This paper reviews some of the most important aspects of MOVPE of III–V semiconductors. The paper starts with fundamental aspects of MOVPE in general, and turns to the use of novel precursors and precursor combinations with special emphasis on impr
Publikováno v:
Journal of Applied Physics. 75:3507-3515
The transport properties of three p‐type modulation‐doped InxGa1−xAs/InP (0.73≤x≤0.82) single‐quantum‐well structures grown by metalorganic chemical‐vapor deposition are reported. High carrier mobilities of μH=7800 cm2/V s coupled wi
Publikováno v:
IEEE Electron Device Letters. 14:36-39
The design and fabrication using low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) of a HEMT on InP substrate that only uses InP and In/sub x/Ga/sub 1-x/As as layer materials are reported. Lattice-matched (x=0.53) and strained (x=0.68) channel
Publikováno v:
Electronics Letters. 28:992-995
The p/sup +/-cap layer was used to fabricate a metal-semiconductor-metal (MSM) interdigitated photodetector on Ga/sub 0.47/In/sub 0.53/As. The measured barrier height was Phi /sub Bn=/0.52 V, the ideality factor n=1.1 and average dark current density
Publikováno v:
Electronics Letters. 31:409-411
High-performance pseudomorphic InP/In/sub x/Ga/sub 1-x/As/InP backside-doped split-channel heterostructure field-effect transistors (BDSCh-HFETs) with a strained undoped In/sub 0.75/Ga/sub 0.25/P Schottky barrier enhancement layer are reported. Devic
Autor:
U. Wiesner, A. Mesquida Kusters, A. Kohl, J. Pillath, S. Brittner, K. Heime, Wolfgang Bauhofer
Publikováno v:
Applied Physics Letters. 64:2520-2522
In‐plane effective masses m*∥ and quantum scattering times are derived from temperature‐dependent Shubnikov–de Haas oscillations measured on a series of modulation‐doped InxGa1−xAs/InP quantum wells with x=0.53 and 0.75, and for well widt
Autor:
D. Gnoth, J. Finders, A. Kohl, J. Geurts, A. Mesquida Kusters, J. Woitok, S. Brittner, K. Heime
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
InP/InGaAs is a powerful material system for a variety of devices including HFETs. The quality of the heterointerface is very sensitive to growth parameters, especially to the switching sequence of the reactive gases. Improvement of the interface wit
Publikováno v:
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).
During the past several years, HEMT structures on InP have attracted much attention in high-speed digital and millimeter wave device applications. Devices which use In/sub x/Ga/sub 1-x/As channel on InP substrates (x/spl ges/0.53) show better perform