Zobrazeno 1 - 10
of 39
pro vyhledávání: '"A. Marrakh"'
Publikováno v:
In IFAC PapersOnLine 2022 55(2):289-294
Publikováno v:
IFAC-PapersOnLine. 55:289-294
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a58ff5097ae3d4017d3bd0e802fbe947
https://doi.org/10.1016/j.ifacol.2022.04.208
https://doi.org/10.1016/j.ifacol.2022.04.208
Autor:
R. Marrakh, A. Bouhdada
Publikováno v:
Active and Passive Electronic Components, Vol 26, Iss 4, Pp 197-204 (2003)
The hot-carrier injection is observed increasingly to degrade the I–V characteristics with the scaling of MOS transistors. For the lightly doped drain MOS transistor the injection of the hot-carriers, caused by the high electric field in the MOS st
Externí odkaz:
https://doaj.org/article/e95310f8ec284504be0dc6391bb54747
Autor:
R. Marrakh, A. Bouhdada
Publikováno v:
Active and Passive Electronic Components, Vol 24, Iss 3, Pp 187-199 (2001)
In this paper, we present a drain current model for stressed short-channel MOSFET's. Stress conditions are chosen so that the interface states generated by hot-carriers are dominant. The defects generated during stress time are simulated by a spatio-
Externí odkaz:
https://doaj.org/article/a78955e5dcbd465c9d9ca7d9dc40db4e
Autor:
R. Marrakh, A. Bouhdada
Publikováno v:
Active and Passive Electronic Components, Vol 23, Iss 3, Pp 137-144 (2000)
We propose to model the evolution of the interface defect density, induced by the hot-carrier-injection, during stress time for n-MOSFET transistor. This interface defect density is modeled by a spatial and temporal gaussian distribution centered clo
Externí odkaz:
https://doaj.org/article/2ddc7b046423457da38d5efc498ed848
Autor:
A. Bouhdada, R. Marrakh
Publikováno v:
Active and Passive Electronic Components, Vol 23, Iss 2, Pp 61-73 (2000)
We propose a model of the surface potential and the threshold voltage for submicron lightly-doped drain LDD nMOSFET’s in relation with the localized defects at the interface Si–SiO2 in the overlap n‾ LDD region. Calculating the surface potentia
Externí odkaz:
https://doaj.org/article/e9b0509653ea4707be826d092b7c2538
Publikováno v:
In Microelectronics Reliability 2004 44(2):223-228
Autor:
Marrakh, R., Bouhdada, A. *
Publikováno v:
In Microelectronics Journal February 2000 31(2):91-94
Autor:
Marrakh, R., Bouhdada, A.
Publikováno v:
Active & Passive Electronic Components. Dec2003, Vol. 26 Issue 4, p197. 8p.
Publikováno v:
In Microelectronics Journal January 1999 30(1):19-22