Zobrazeno 1 - 10
of 20
pro vyhledávání: '"A. M. Sletov"'
Autor:
A. M. Sletov, Marc A. Gluba, Viktor V. Brus, V. M. Lorents, I. M. Fodchuk, Pavlo D. Maryanchuk, M. N. Solovan, M. M. Sletov
Publikováno v:
Optics and Spectroscopy. 117:753-755
Structural and photoluminescent properties of TiN thin films deposited by dc reactive magnetron sputtering are studied. It is found that TiN thin films are polycrystalline with a grain size of ∼15 nm and have a NaCl-type cubic crystal structure wit
Publikováno v:
Telecommunications and Radio Engineering. 66:1205-1211
Wide-band binary A 2 B 6 compounds are widely used in various electronic devices [1]. The properties of these materials are determined to the significant degree by the defect formation mechanisms, especially that involving non-controllable oxygen imp
Publikováno v:
Telecommunications and Radio Engineering. 66:465-471
Publikováno v:
Telecommunications and Radio Engineering. 65:441-445
Publikováno v:
Inorganic Materials. 40:905-908
The structural and luminescent properties of ZnSe〈Mg〉 crystals are studied. The results indicate that Mg doping gives rise to local lattice distortions and influences the densities of native point defects. This leads to broadening of x-ray diffra
Publikováno v:
Russian Physics Journal. 46:736-739
The reflectance and photoluminescence spectra of layers of zinc selenide with cubic and hexagonal modifications produced by isovalent substitution are investigated. It is established that the main band in the photoluminescence spectra at 300 K is the
Publikováno v:
Semiconductors. 36:398-403
It is shown that optical reflectance spectra of Al0.1Ga0.9N thin films deposited on sapphire substrates exhibit some special features in the range of 4.0–5.5 eV, which is confirmed by modulation and photosensitivity spectra. These special features
Publikováno v:
Semiconductors. 34:35-39
The band structure of AlxGa1−xN substitutional solid solution is calculated by the method of local model pseudopotential in the modified virtual-crystal approximation. This provides an opportunity to explain both the dependence of the energy gap va
Publikováno v:
Inorganic Materials. 43:1304-1306
A process is described for the preparation of ZnO heterolayers on single-crystal zinc chalcogenide (ZnTe, ZnSe, and ZnS) substrates via isovalent substitution.
Publikováno v:
Journal of Applied Spectroscopy. 62:1075-1079