Zobrazeno 1 - 10
of 17
pro vyhledávání: '"A. M. Shakra"'
Publikováno v:
Materials; Volume 15; Issue 18; Pages: 6403
A quenching technique was used to prepare the chalcogenide system of the Se60−xGe35Ga5Sbx(x = 0, 5, and 10 at. %), which was deposited as thin films onto glass substrates using a thermal evaporation technique. X-ray diffraction patterns were used f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::318ff0897d5ca497218aaeb9d7c64333
Publikováno v:
Materials (Basel, Switzerland). 15(18)
A quenching technique was used to prepare the chalcogenide system of the Se60-xGe35Ga5Sbxamp;nbsp;(
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::441cbe7416df34af690acb30bb31542c
https://pubmed.ncbi.nlm.nih.gov/36143714
https://pubmed.ncbi.nlm.nih.gov/36143714
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:14079-14091
Bulk glassy Se98Te2 and Se96Te2X2 (X = Zn and Cd) were prepared by the melting quenching method. Thin films of various thicknesses (200–670 nm) were obtained by the thermal evaporation method. The structure of the prepared compositions was investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af194c61a1a2706ecf4b8ff67641e3e3
https://doi.org/10.1007/s10854-021-05987-3
https://doi.org/10.1007/s10854-021-05987-3
Publikováno v:
Indian Journal of Physics. 95:595-606
The effect of doping glassy Se98Te2 alloy with Cd and Zn impurities on the thermally crystallization behavior is investigated using differential thermal analysis (DTA) at different heating rates. In this study, the glass transition activation energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ad76d4a56f053f075faed564b1d3016
https://doi.org/10.1007/s12648-020-01715-5
https://doi.org/10.1007/s12648-020-01715-5
Publikováno v:
Materials. 16:1875
The authors would like to make a correction in a recently published paper [...]
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbb183ddf29367147cfbbfbe0ed09cf7
https://doi.org/10.3390/ma16051875
https://doi.org/10.3390/ma16051875
Autor:
A. M. Shakra, G.F. Salem
Publikováno v:
Optical and Quantum Electronics. 53
Se85.26Ge12.92Cd1.81 thin films were prepared using glass and fluorine tin oxide FTO substrates by the technique of thermal evaporation. Structure was performed using X-ray diffraction pattern and the energy dispersive X-ray analysis EDX. The optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e26f696178bb27b4b5ae3067405bb0b
https://doi.org/10.1007/s11082-021-03156-8
https://doi.org/10.1007/s11082-021-03156-8
Autor:
J Inshasic, B Yamout, M Farghali, MA Sara Ahmad, R Alcharif, A Almadani, S Basu, A Boshra, AM Hassan, A Moussa, R El Ojeil, M Shakra, A Shatila, M Thakre, A Verma, T Zein
Publikováno v:
Value in Health. 25:S105
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::761974704979836843a390c60b2c3d83
https://doi.org/10.1016/j.jval.2021.11.501
https://doi.org/10.1016/j.jval.2021.11.501
Autor:
A. M. Shakra, E.G. El-Metwally
Publikováno v:
Journal of Electronic Materials. 47:4663-4671
Bulk glassy samples of Se0.7Ge0.3 and Se0.7Ge0.25X0.05 (X = Ag, Cd or Pb) chalcogenide glass have been prepared by melt-quenching method. The studied compositions were examined in powder form by x-ray diffraction analysis. The direct-current (dc) con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866351b14534f0f9e1016d502d22faf8
https://doi.org/10.1007/s11664-018-6353-z
https://doi.org/10.1007/s11664-018-6353-z
Publikováno v:
Journal of Electronic Materials. 45:3332-3339
Se80Ge20−xCdx (0 ≤ x ≤ 12 at.%) compositions were prepared by a quenching technique. Thin films of the obtained compositions were deposited on dry clean glass substrates by a thermal evaporation technique. The chemical composition of the film s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ff91419c820f99269c336121887b50
https://doi.org/10.1007/s11664-016-4470-0
https://doi.org/10.1007/s11664-016-4470-0
Determination of allowed transitions types and the optical parameters of Se–Ge–Ag chalcogenide films
Autor:
Amira M. Shakra, E.G. El-Metwally
Publikováno v:
The European Physical Journal B. 91
Amorphous Se0.68Ge0.24Ag0.08 films were prepared by the known thermal evaporation method. X-ray diffraction (XRD) and energy dispersive X-ray (EDX) analysis were used to identify the structure of the prepared samples. Transmittance T(λ) was measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23656b4974fadb0d755d0c565691b5ad
https://doi.org/10.1140/epjb/e2018-90273-7
https://doi.org/10.1140/epjb/e2018-90273-7