Zobrazeno 1 - 10
of 30
pro vyhledávání: '"A. M. Prisakar"'
Autor:
N. A. Ivliev, V. V. Podlipnov, S. N. Khonina, K. S. Loshmanskii, A. M. Prisakar, V. G. Abashkin, A. Yu. Meshalkin, E. A. Akimova
Publikováno v:
Optics and Spectroscopy. 129:489-494
Publikováno v:
Technical Physics. 62:1403-1406
Application of negative corona discharge in the course of recording leads to an increase in the holographic sensitivity of the Cu–As2Se3 structure and diffraction efficiency of the recorded holographic gratings and the relief gratings fabricated wi
Publikováno v:
Technical Physics. 60:466-468
Optical recording of superimposed holographic gratings in a corona discharge initiated in a Ni-As2S3 structure is studied. It is shown that a corona discharge used for recording holographic gratings in this structure improves its holographic sensitiv
Publikováno v:
Technical Physics Letters. 40:401-403
Improvement of the optical recording process in the Cu-As2S3 structure in the whole visible band was observed when the structure is simultaneously exposed and charged in the field of a negative corona discharge as compared to the standard direct reco
Publikováno v:
Technical Physics. 54:305-308
Recording of optical holographic gratings based on photostructural transformations in thin (≈ 1 μm) As2S3 and As2S3 semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Ini
Publikováno v:
Technical Physics Letters. 32:45-47
The influence of an applied electric field on the photoinduced changes in the optical properties of glassy chalcogenide semiconductor films of the (As2S3)x(As2Se3)1−x solid solution system has been studied in thin-layer structures of the following
Publikováno v:
Technical Physics. Sep2017, Vol. 62 Issue 9, p1403-1406. 4p.
Publikováno v:
Technical Physics Letters. 35:375-376
It is suggested to record double-exposure holographic interferograms on a photothermoplastic carrier based on chalcogenide glassy semiconductors (CGSs), with the first exposure performed using the regime of photoinduced changes in the semiconductor l
Autor:
Ivliev, N. A.1,2 (AUTHOR) ivlievn@gmail.com, Podlipnov, V. V.1,2 (AUTHOR), Khonina, S. N.1,2 (AUTHOR), Loshmanskii, K. S.3 (AUTHOR), Prisakar, A. M.3 (AUTHOR), Abashkin, V. G.3 (AUTHOR), Meshalkin, A. Yu.3 (AUTHOR), Akimova, E. A.3 (AUTHOR)
Publikováno v:
Optics & Spectroscopy. Apr2021, Vol. 129 Issue 4, p489-494. 6p.
Autor:
Nastas, A. M.1 (AUTHOR) nastas_am@rambler.ru
Publikováno v:
Technical Physics. Aug2019, Vol. 64 Issue 8, p1184-1188. 5p. 3 Graphs.