Zobrazeno 1 - 10
of 60
pro vyhledávání: '"A. M. Mizerov"'
Autor:
Elena I. Vasilkova, Evgeny V. Pirogov, Maxim S. Sobolev, Evgeny V. Ubiyvovk, Andrey M. Mizerov, Pavel V. Seredin
Publikováno v:
Конденсированные среды и межфазные границы, Vol 25, Iss 1 (2023)
The present work is concerned with finding optimal technological conditions for the synthesis of heterostructures with a metamorphic buffer for InGaAs/InP photodetectors in the wavelength range of 2.2–2.6 um using molecular beam epitaxy. Three choi
Externí odkaz:
https://doaj.org/article/c16dd220e2804f96930527857b648629
Autor:
Pavel V. Seredin, Nikolay A. Kurilo, Obaid Radam Ali, Nikita S. Buylov, Dmitry L. Goloshchapov, Sergey Alexandrovich Ivkov, Alexandr S. Lenshin, Ivan N. Arsentyev, Alexey V. Nashchekin, Shukrilo Sh. Sharofidinov, Andrey M. Mizerov, Maksim S. Sobolev, Evgeniy V. Pirogov, Igor V. Semeykin
Publikováno v:
Конденсированные среды и межфазные границы, Vol 25, Iss 1 (2023)
In this study, we analyzed the result of the influence of the non-polar plane of a sapphire substrate on the structural, morphological, and optical properties and Raman scattering of the grown epitaxial GaN film. It was found that selected technolo
Externí odkaz:
https://doaj.org/article/22a630bd5f8c4442abcb3c330a997c04
Autor:
Alexander S. Lenshin, Pavel V. Seredin, Dmitry S. Zolotukhin, Artemy N. Beltyukov, Andrey M. Mizerov, Igor A. Kasatkin, Ali O. Radam, Evelina P. Domashevskaya
Publikováno v:
Конденсированные среды и межфазные границы, Vol 24, Iss 1 (2022)
In this work, we studied the efficiency of introducing nanoporous silicon as a buffer layer in the growth of AlxGa1–xN/AlN/Si(111) on a single-crystal silicon by molecular beam growth technology. We also considered its influence on the morphologica
Externí odkaz:
https://doaj.org/article/63da53408835448f8cbd92efc1403afd
Publikováno v:
Конденсированные среды и межфазные границы. 25:20-26
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc8c9136d628dc315d5b2b90c8007a31
https://doi.org/10.17308/kcmf.2023.25/10972
https://doi.org/10.17308/kcmf.2023.25/10972
Autor:
P. V. Seredin, N. A. Kurilo, Ali O. Radam, N. S. Builov, D. L. Goloshchapov, S. A. Ivkov, A. S. Lenshin, I. N. Arsentiev, A. V. Nashchekin, Sh. Sh. Sharofldinov, A. M. Mizerov, M. S. Sobolev, E. V. Pirogov, I. V. Semeykin
Publikováno v:
Конденсированные среды и межфазные границы. 25:103-111
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e25bda912307c7f6477f8a1df73560a4
https://doi.org/10.17308/kcmf.2023.25/10978
https://doi.org/10.17308/kcmf.2023.25/10978
Autor:
P. V. Seredin, Ali Obaid Radam, D. L. Goloshchapov, A. S. Len’shin, N. S. Buylov, K. A. Barkov, D. N. Nesterov, A. M. Mizerov, S. N. Timoshnev, E. V. Nikitina, I. N. Arsentyev, Sh. Sharafidinov, S. A. Kukushkin, I. A. Kasatkin
Publikováno v:
Semiconductors. 56:253-258
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06a5190408f8d74a096569b28fc9624e
https://doi.org/10.1134/s1063782622040030
https://doi.org/10.1134/s1063782622040030
Autor:
D. V. Mokhov, T. N. Berezovskaya, A. M. Mizerov, K. Yu. Shubina, A. A. Kolmakova, A. G. Kolmakov, M. L. Kheifetz
Publikováno v:
Nonlinear Phenomena in Complex Systems. :13-20
The results of a study of liquid photochemical metal-assisted etching of a series of samples of n-type Ga-polar GaN layers grown by molecular-beam epitaxy with nitrogen plasma activation are presented. Under the chosen conditions of the etching proce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4390e526678b3dbe258b7c0553b33103
https://doi.org/10.33581/1561-4085-2022-25-1-13-20
https://doi.org/10.33581/1561-4085-2022-25-1-13-20
Autor:
P. V. Seredin, K. A. Barkov, D. L. Goloshchapov, A. S. Lenshin, Yu. Yu. Khudyakov, I. N. Arsentiev, A. A. Lebedev, Sh. Sh. Sharofidinov, A. M. Mizerov, I. A. Kasatkin, Tatiana Prutskij
Publikováno v:
Semiconductors. 55:995-1001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64df579fdf860bb4bc350aeda4a4eef8
https://doi.org/10.1134/s1063782621080170
https://doi.org/10.1134/s1063782621080170
Autor:
S. N. Timoshnev, H. Leiste, Pavel Seredin, A. M. Mizerov, S. A. Kukushkin, A. S. Lenshin, D. S. Zolotukhin, I. N. Arsentyev, Yu. Yu. Khudyakov, A. N. Beltyukov, Dmitry Goloshchapov
Publikováno v:
Semiconductors. 54:596-608
A set of structural and spectroscopic methods of diagnostics is used to study the influence of a nanoporous silicon (por-Si) transition layer on the practical implementation and specific features of growth of GaN layers on SiC/por-Si/c-Si templates b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d130323f79d23b5b5a00d64f989f6c00
https://doi.org/10.1134/s1063782620050115
https://doi.org/10.1134/s1063782620050115
Autor:
Dmitry Goloshchapov, A. M. Mizerov, S. N. Timoshnev, Ekaterina V. Nikitina, Pavel Seredin, S. A. Kukushkin, A. S. Lenshin, D. S. Zolotukhin, I. N. Arsentiev
Publikováno v:
Semiconductors. 54:417-425
Using a complex of structural and spectroscopic methods of diagnostics, the influence of a nanoporous-silicon (por-Si) transition layer on the optical properties of GaN layers grown on SiC/por-Si/c-Si templates by molecular-beam epitaxy with the plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d8c73f2ab36229e6dcac4cba8129dbf
https://doi.org/10.1134/s1063782620040168
https://doi.org/10.1134/s1063782620040168