Zobrazeno 1 - 3
of 3
pro vyhledávání: '"A. M. Minarskii"'
Autor:
A. V. Ankudinov, A. M. Minarskii
Publikováno v:
Technical Physics. 66:835-850
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af19d81ebebe3f3b3b1164d86e9df0dc
https://doi.org/10.1134/s1063784221060037
https://doi.org/10.1134/s1063784221060037
Autor:
P. B. Rodin, A. M. Minarskii
Publikováno v:
Semiconductors. 31:366-370
The transverse stability of an impact-ionization front in a large-area silicon p+-n-n+ structure is studied. An analytical model allowing for simultaneous motion of the ionization front and displacement of the majority carriers from the nondepleted p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f6849970e4b5562cbec740776755892
https://doi.org/10.1134/1.1187164
https://doi.org/10.1134/1.1187164
Autor:
A. M. Minarskii, P. B. Rodin
Publikováno v:
Semiconductors. 34:665-667
The threshold of the voltage-rise rate was estimated; this threshold should be achieved in a reversely biased diode structure to excite an impact ionization front propagating with a velocity higher than saturated carrier drift velocities.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dfb65b8ee00be76d6067b20284cab69
https://doi.org/10.1134/1.1188051
https://doi.org/10.1134/1.1188051