Zobrazeno 1 - 10
of 107
pro vyhledávání: '"A. M. Malyarenko"'
Autor:
R. V. Li, N. N. Potrakhov, A. A. Ukhov, S. V. Shapovalov, L. E. Klyachkin, N. T. Bagraev, A. M. Malyarenko, V. A. Mazurok
Publikováno v:
Biomedical Engineering. 56:378-383
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a1efac44b012aebf5c89e405798a52
https://doi.org/10.1007/s10527-023-10240-8
https://doi.org/10.1007/s10527-023-10240-8
Publikováno v:
Modern Electronic Materials, Vol 3, Iss 1, Pp 40-49 (2017)
The results of studying the quantum conductance staircase of holes in one-dimensional channels obtained by the split-gate method inside silicon nanosandwiches that are the ultra-narrow quantum well confined by the delta barriers heavily doped with bo
Externí odkaz:
https://doaj.org/article/02db6ae08a364eafbaca78fc3a0775ce
Autor:
L.E. Klyachkin, Nikolai T. Bagraev, Vladimir V. Romanov, A. V. Osipov, S. A. Kukushkin, A. M. Malyarenko, V. S. Khromov
Publikováno v:
Semiconductors. 55:137-145
A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of single-crystal SiC thin films grown on the (100), (110), and (111) surfaces of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8427bf6b83e404fb32dc9505724c25d1
https://doi.org/10.1134/s106378262102007x
https://doi.org/10.1134/s106378262102007x
Autor:
N. I. Rul, V. S. Khromov, P. A. Golovin, A. P. Presnukhina, A. M. Malyarenko, L.E. Klyachkin, N. T. Bagraev, A. S. Reukov
Publikováno v:
Technical Physics. 65:1591-1599
Over the past 30 years, there has been a great deal of interest in the use of terahertz (THz) radiation in various fields, such as security systems, communications, and spectroscopy. In addition, THz radiation is increasingly being used in practical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b01ecadca366e0c42279d66f569a8654
https://doi.org/10.1134/s1063784220100023
https://doi.org/10.1134/s1063784220100023
Publikováno v:
Technical Physics. 65:1442-1445
A spectrometer based on silicon nanosandwiches (SNS) is proposed for problems of personalized medicine. SNS structures exhibit properties of terahertz (THz) emitter and receiver of the THz response of biological tissue. Measurements of the current-vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::286a560b65adf76bf15f7d50a6ff270d
https://doi.org/10.1134/s1063784220090066
https://doi.org/10.1134/s1063784220090066
Autor:
V. S. Khromov, Nikolai T. Bagraev, S. A. Kukushkin, A. M. Malyarenko, Andrey Osipov, L.E. Klyachkin
Publikováno v:
2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
The ability to detect the terahertz (THz) emission from a silicon nanosandwich structure (Si-NS) is demonstrated with the silicon carbide nanostructure (SiC-NS) as a detector. Electrical response in longitudinal voltage of the detector was observed u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7888e798e200e001fbfb51ebe6575ff
https://doi.org/10.1109/irmmw-thz50926.2021.9567540
https://doi.org/10.1109/irmmw-thz50926.2021.9567540
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 20:81-98
The results of studying the quantum conductance staircase of holes in one−dimensional channels obtained by the split−gate method inside silicon nanosandwiches that are the ultra−narrow quantum well confined by the delta barriers heavily doped w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca38e83afd36bc04529b4731b33b4ef5
https://doi.org/10.17073/1609-3577-2017-2-81-98
https://doi.org/10.17073/1609-3577-2017-2-81-98
Autor:
Nikolay T. Bagraev, V.V. Romanov, Leonid E. Klyachkin, Andrey Koudryavtsev, Anna M. Malyarenko
Publikováno v:
Superconductor
Superconductivity of the sandwich’ S-Si-QW-S structures that represent the p-type high mobility silicon quantum wells confined by the nanostructured δ - barriers heavily doped with boron on the n-type Si (100) surface has been demonstrated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0131bb2bd276e512774e29acfe516959
http://www.intechopen.com/articles/show/title/superconductor-properties-for-silicon-nanostructures
http://www.intechopen.com/articles/show/title/superconductor-properties-for-silicon-nanostructures
Publikováno v:
Journal of Physics: Conference Series. 2176:012005
The use of a dumbbell void model is adequate for quantifying hydraulic tortuosity from reservoir parameters. The dumbbell model of the void space involves the alternation of filtering channels of the rock with pores (macrocapillaries) and interporeal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ee9b427e542d291a484021421c047f
https://doi.org/10.1088/1742-6596/2176/1/012005
https://doi.org/10.1088/1742-6596/2176/1/012005
We present the experimental data of the electric features of the silicon nanosandwichstructures obtained by silicon planar technology in the frameworks of the Hall geometry that represent the ultra-shallow silicon quantum well of 2 nm wide that are c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2db08f1d81ad8d21852663e71e0693d7
http://arxiv.org/abs/2011.14803
http://arxiv.org/abs/2011.14803