Zobrazeno 1 - 10 of 17 pro vyhledávání: '"A. M. Makarenkov"'
2
Analysis of the Three-Dimensional Model of Diffusion of Minority Charge Carriers Generated by an Electron Probe in a Heterogeneous Semiconductor Material by Means of Projection Methods
Autor: M. A. Stepovich, E. V. Seregina, A. M. Makarenkov
Publikováno v: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:80-86
Algorithms for using the Galerkin projection method and the projection least squares method to analyze the three-dimensional model of the diffusion of minority charge carriers generated by an electron probe in a semiconductor material are presented.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c8e8cd06a19de8404b23c695d52f6e3a
https://doi.org/10.1134/s1027451018010160
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3
On the possibility of using the Galerkin projection method to model the spatial distribution of minority charge carriers generated by an electron probe in a semiconductor
Autor: E. V. Seregina, A. M. Makarenkov, M. A. Stepovich, M. N. Filippov
Publikováno v: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:981-986
In this paper, the results of using the Galerkin projection method to model the spatial distribution of minority charge carriers generated by an electron probe in a semiconductor material are presented. The problem is solved in the cylindrical coordi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e3e3ee91b0e1d0df54fd352d8f2e53b5
https://doi.org/10.1134/s1027451017050147
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4
The projection Galerkin method for solving the time-independent differential diffusion equation in a semi-infinite domain
Autor: E. V. Seregina, A. M. Makarenkov, M. A. Stepovich
Publikováno v: Computational Mathematics and Mathematical Physics. 57:802-814
Using the diffusion equation as an example, results of applying the projection Galerkin method for solving time-independent heat and mass transfer equations in a semi-infinite domain are presented. The convergence of the residual corresponding to the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::db52e32ab8224dd43863e46af644f0f0
https://doi.org/10.1134/s0965542517050074
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5
On some problems of modeling the distributions of minority charge carriers generated by an electron beam in a semiconductor material
Autor: E. V. Seregina, M. A. Stepovich, M. N. Filippov, A. M. Makarenkov
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:445-449
The results of estimating different projection approximation schemes (a modified least-squares method and the Galerkin and Ritz methods) are presented. They are used to simulate the distribution of minority charge carriers, which is observed as a res
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0cd9ca033ecfc9db36146eb4c2917a34
https://doi.org/10.1134/s1027451016020348
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7
On the possibility of using recursive trigonometric functions to calculate the distribution of nonequilibrium minority charge carriers in a two-layer semiconductor material
Autor: A. M. Makarenkov, E. V. Seregina, M. N. Filippov, M. A. Stepovich
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:929-933
Some possibilities of using a new method for the continuous approximation of step functions are considered. It is based on using trigonometric expressions in the form of recursive functions. For a model of independent sources, a second-order differen
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8f40aad0e818fc256bf972b4efbd52c0
https://doi.org/10.1134/s102745101505016x
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8
On the modification of a model of minority charge-carrier diffusion in semiconductor materials based on the use of recursive trigonometric functions and the estimation of the stability of solutions for the modified model
Autor: M. A. Stepovich, E. V. Seregina, A. M. Makarenkov
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 8:922-925
A modified model of the diffusion of minority charge carriers generated by a broad electron beam in semiconductor materials is proposed. New methods for the approximation of step functions are used, and an estimate of the stability of solutions to th
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::44263efdca616b78ba67196d599fbb7b
https://doi.org/10.1134/s1027451014050188
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9
On a modified projection scheme of the least-squares method for the modeling of the distribution of minority charge carriers generated by an electron beam in a homogeneous semiconductor material
Autor: E. V. Seregina, A. M. Makarenkov, M. A. Stepovich
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:1077-1080
A modified projection scheme of the least-squares method is considered for modeling of the distribution of minority charge carriers generated by an electron beam in a homogeneous semiconductor material. The order estimate is given, and the condition
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc2f072160f9665ffbf6ab03b6e81ffa
https://doi.org/10.1134/s1027451013060177
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10
Statistical analysis of a model of collective motion of minority charge carriers using the projection method
Autor: A. M. Makarenkov, M. A. Stepovich, E. V. Seregina
Publikováno v: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:330-337
For a model of the collective motion of minority charge carriers (MCCs) generated by various external energy sources (broad electron and light beams) in a homogeneous semiconductor material, a method for approximating their statistical characteristic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::89bc6168b2c2b955ab664e60b0cc1cf2
https://doi.org/10.1134/s1027451012040167
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