Zobrazeno 1 - 10
of 22
pro vyhledávání: '"A. M. Khort"'
Autor:
V. I. Shvets, G. M. Sorokoumova, A. I. Lyutik, A. B. Pshenichnikova, D. I. Prokhorov, N. V. Rukosueva, A. G. Yakovenko, A. M. Khort, S. N. Chvalun, Yu. M. Krasnopolsky, V. Yu. Balabanyan, E. S. Severin, A. A. Kubatiev
Publikováno v:
Тонкие химические технологии, Vol 12, Iss 6, Pp 5-31 (2017)
The results of many years of scientific research in the field of physico-chemical biology and its most important direction - lipidology, conducted by the leading scientific school under the leadership of Academician RAS Vitaly I. Shvets, are reported
Externí odkaz:
https://doaj.org/article/81965a0b7e354018b3ced4226cf333d9
Publikováno v:
Конденсированные среды и межфазные границы, Vol 23, Iss 3 (2021)
Porous silicon is currently one of the most studied materials which is used both in the areas traditional for silicon, such as electronics and optoelectronics, and in completely unconventional ones, such as catalysis, energetics, biology, and medicin
Externí odkaz:
https://doaj.org/article/af0b13190eae42f697b0287ae74091bb
Publikováno v:
Doklady Chemistry. 495:178-181
It has been shown that the difference in the structure of electronic orbitals of silicon and germanium atoms is a decisive factor responsible for the formation of porous layers during their electrochemical etching in solutions of hydrofluoric acid.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f5a799cfaf0025c8ff65d27fda326d
https://doi.org/10.1134/s001250082011004x
https://doi.org/10.1134/s001250082011004x
Autor:
M. V. Tsygankova, A. M. Khort, E. N. Abramova, D. S. Kornilova, E. A. Slipchenko, V. I. Shvets, A. G. Yakovenko
Publikováno v:
Russian Journal of Inorganic Chemistry. 63:1236-1242
A model of the chemical interaction of Si with the (HF2)– ion was propsoed to explain some experimental data on the formation of porous silicon.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::283278f81ed5c0a8384679046433daac
https://doi.org/10.1134/s0036023618090024
https://doi.org/10.1134/s0036023618090024
Autor:
E. N. Abramova, T. A. Sorokin, A. M. Khort, Yu. V. Syrov, V. I. Shvets, M. V. Tsygankova, A. G. Yakovenko
Publikováno v:
Doklady Chemistry. 481:166-169
The change in the photoluminescence peaks of porous silicon at λ = 640–670 and 540–560 nm at 300 and 77 K, as well as their behavior after low-temperature annealing of the samples at 500°С, has been studied. The change in these peaks correlate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6200da2856906ce0bd746d65a3d8c648
https://doi.org/10.1134/s0012500818080037
https://doi.org/10.1134/s0012500818080037
Autor:
Yu. Syrov, M. V. Tsygankova, T. A. Sorokin, E. N. Abramova, V. I. Shvets, A. M. Khort, A. G. Yakovenko
Publikováno v:
Доклады академии наук. 481:503-506
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e1b6920bcfd190f34567ea0b561781f
https://doi.org/10.31857/s086956520002132-8
https://doi.org/10.31857/s086956520002132-8
Autor:
E. A. Slipchenko, E. N. Abramova, A. M. Khort, V. N. Tsygankov, Yu. V. Syrov, A. G. Yakovenko, V. I. Shvets
Publikováno v:
Doklady Chemistry. 487:165-167
Features of the formation of porous silicon layers during anodic etching of p-Si were considered. A fundamental difference between the mechanisms of the formation of nanostructured layers on p-and n-Si was shown.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1acb67ff4a987f38a24b10dca8a7ce77
https://doi.org/10.1134/s0012500819070012
https://doi.org/10.1134/s0012500819070012
Autor:
A. M. Khort, E. S. Severin, A. I. Lyutik, A. B. Pshenichnikova, V. I. Shvets, A. A. Kubatiev, D. I. Prokhorov, S. N. Chvalun, A. G. Yakovenko, G. M. Sorokoumova, V. Yu. Balabanyan, Yu. M. Krasnopolsky, N. V. Rukosueva
Publikováno v:
Тонкие химические технологии, Vol 12, Iss 6, Pp 5-31 (2017)
The results of many years of scientific research in the field of physico-chemical biology and its most important direction - lipidology, conducted by the leading scientific school under the leadership of Academician RAS Vitaly I. Shvets, are reported
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a71960e98e38c406bdaeb3757a1e037a
https://www.finechem-mirea.ru/jour/article/view/121
https://www.finechem-mirea.ru/jour/article/view/121
Autor:
V. I. Shvets, E. N. Abramova, A. G. Yakovenko, A. M. Khort, V. N. Tsygankov, E. A. Slipchenko
Publikováno v:
Doklady Chemistry. 477:271-273
The effect of the type of Si conductivity on the initiation and formation of pores in silicon samples during electrochemical etching was studied. The difference between the pore formation processes in n- and p-conducting silicon was attributed to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3e800e3d258495c5f1e7bf4733c015
https://doi.org/10.1134/s0012500817120011
https://doi.org/10.1134/s0012500817120011
Publikováno v:
Inorganic Materials. 52:979-984
Variations in the contours of pores produced in n-type silicon by electrochemical etching in hydrofluoric acid solutions are interpreted in terms of the mechanism underlying the chemical interaction of the etchant with silicon and the anisotropy of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85821382ad137c97f36945aa96f8fc26
https://doi.org/10.1134/s0020168516100010
https://doi.org/10.1134/s0020168516100010