Zobrazeno 1 - 7
of 7
pro vyhledávání: '"A. M. Hosalli"'
Autor:
Pavel Frajtag, Nadia A. El-Masry, Tanja Paskova, A. M. Hosalli, Salah M. Bedair, Joshua P. Samberg, Peter C. Colter
Publikováno v:
Journal of Crystal Growth. 352:203-208
We report on the generation of GaN nanowires (NWs) using mask-less reactive ion etching (RIE). The NWs are believed to be the result of a high etching rate in regions where a high dislocation density is present in the GaN films grown on sapphire subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bc62b1828efb8fe4da7ca8ab0e2c27b
https://doi.org/10.1016/j.jcrysgro.2011.12.055
https://doi.org/10.1016/j.jcrysgro.2011.12.055
Publikováno v:
SPIE Newsroom.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::932f5bf9e89cbe31af8d1005b0b6f30f
https://doi.org/10.1117/2.1201105.003750
https://doi.org/10.1117/2.1201105.003750
Publikováno v:
Applied Physics Letters. 105:031107
InGaN/GaN multiple quantum well (MQW) structures suffer from a high amount of compressive strain in the InGaN wells and the accompanied piezoelectric field resulting in both a blue shift in emission and a reduction of emission intensity. We report th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5762171c77d2cfb7a0c732d18853f619
https://doi.org/10.1063/1.4890738
https://doi.org/10.1063/1.4890738
Autor:
Guanjun You, Jie Liu, Nadia A. El-Masry, Li Wang, A. M. Hosalli, Jian Xu, Salah M. Bedair, Zhenyu Jiang
Publikováno v:
Optics Letters. 39:1501
The mechanism behind the improved light emission properties of semipolar and nonpolar InGaN/GaN multiple quantum wells (MQWs) conformally grown over n-GaN nanowires (NWs) was studied using variable-temperature photoluminescence and time-resolved phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59161ddd9e21a7fc5d06a80014a18a89
https://doi.org/10.1364/ol.39.001501
https://doi.org/10.1364/ol.39.001501
Publikováno v:
Applied Physics Letters. 103:231108
We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::506bf548ccbe64b5dfe264be7fb31b6e
https://doi.org/10.1063/1.4841755
https://doi.org/10.1063/1.4841755
Autor:
A. M. Hosalli, D. M. Van Den Broeck, Joshua P. Samberg, Nadia A. El-Masry, D. Bharrat, Salah M. Bedair
Publikováno v:
Applied Physics Letters. 103:082106
We demonstrate gallium nitride (GaN) nanowires formation by controlling the selective and anisotropic etching of N-polar GaN in hot phosphoric acid. Nanowires of ∼109/cm,2 total height of ∼400 nm, and diameters of 170–200 nm were obtained. Thes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90331f65c136536a04a2370519ba32b0
https://doi.org/10.1063/1.4819272
https://doi.org/10.1063/1.4819272
Autor:
Pavel Frajtag, Geoffrey K. Bradshaw, Neeraj Nepal, Salah M. Bedair, A. M. Hosalli, Nadia A. El-Masry
Publikováno v:
Applied Physics Letters. 98:143104
We demonstrate a light-emitting diode (LED) structure with multiple quantum wells (MQWs) conformally grown on semipolar and nonpolar plane facets of n-GaN nanowires (NWs), followed by deposition of fully coalesced p-GaN on these nanowires. Overgrowth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640c82ad8be497692bccbcb8f4a18256
https://doi.org/10.1063/1.3572032
https://doi.org/10.1063/1.3572032