Zobrazeno 1 - 6
of 6
pro vyhledávání: '"A. M. Georgievskii"'
Autor:
A. M. Georgievskii, B. S. Ryvkin
Publikováno v:
Semiconductors. 33:813-819
The problem of polarization switching of light from a vertical cavity surface emitting laser (VCSEL) is discussed. It is shown that heating of holes in the p-type distributed Bragg reflector and of electrons and holes in the quantum wells of the acti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331b889012377f372d933a22957e9b03
https://doi.org/10.1134/1.1187788
https://doi.org/10.1134/1.1187788
Autor:
A. Ya. Shik, E. Yu. Kotel’nikov, V. E. Tokranov, N. A. Strugov, A. M. Georgievskii, B. S. Ryvkin, V. A. Solov’ev
Publikováno v:
Semiconductors. 31:378-383
A phenomenological theory describing nonstationary carrier transport processes in a system of undoped quantum wells with short carrier generation pulses is developed. An experimental method for finding the characteristic carrier trapping and carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05de34619441f7621cba9561ddb46b1a
https://doi.org/10.1134/1.1187167
https://doi.org/10.1134/1.1187167
Autor:
Innokenty I. Novikov, A. M. Georgievskii, N. Yu. Gordeev, Sergey V. Zaitsev, V. I. Kopchatov, P. S. Kop’ev, L. Ya. Karachinskii
Publikováno v:
Semiconductors. 33:779-781
An analytic expression for the shape function for homogeneous broadening of the emission spectra of semiconductor heterostructure lasers is obtained on the basis of simple expressions from the theory of the superradiance of two-level systems. Good ag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::904c48f22d87b6ddc5c9f82048a926bb
https://doi.org/10.1134/1.1187780
https://doi.org/10.1134/1.1187780
Autor:
A. M. Georgievskii, I. S. Tarasov, P. S. Kop’ev, L. Ya. Karachinskii, Nikita A. Pikhtin, Sergey V. Zaitsev
Publikováno v:
Technical Physics Letters. 25:334-336
Spectral and spatial characteristics of the output of InGaAsP/InP separate-confinement double heterostructure laser are investigated. The measurements are performed in quasicontinuous and continuous pumping regimes at room temperature. These lasers a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4ce4327703ddf171d490fb3a53fc90c
https://doi.org/10.1134/1.1262471
https://doi.org/10.1134/1.1262471
Autor:
A. M. Georgievskii, Sergey V. Zaitsev
Publikováno v:
Semiconductors. 32:332-334
InGaAsP/InP laser heterostructures in the continuous pumping regime were investigated by autocorrelation methods. It was shown that below and above the lasing threshold the laser radiation consists of ultrashort coherent pulses and the temporal coher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cde334dc11458796c5b9eb09fcdfa4f
https://doi.org/10.1134/1.1187391
https://doi.org/10.1134/1.1187391
Autor:
V. M. Ustinov, A. M. Georgievskii, V. I. Kopchatov, A. E. Zhukov, A. R. Kovsh, Nikolai N. Ledentsov, Zh. I. Alferov, N. Yu. Gordeev, P. S. Kop’ev, A. Yu. Egorov, Sergey V. Zaitsev, Dieter Bimberg
Publikováno v:
Scopus-Elsevier
Injection heterolasers based on quantum dots grown by molecular-beam epitaxy have been investigated. It is shown that the room-temperature threshold current density can be lowered to 15 A/cm2 by decreasing the nonradiative recombination and increasin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81481543e2f354ac971d3d1ceaa65879
http://www.scopus.com/inward/record.url?eid=2-s2.0-0039918153&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0039918153&partnerID=MN8TOARS
