Zobrazeno 1 - 10
of 39
pro vyhledávání: '"A. Li-Fatou"'
Autor:
Li-Fatou, A.V., Douglas, M.
Publikováno v:
In Applied Surface Science 2003 203:290-293
Autor:
Jacques, J. M., Jones, K. S., Robertson, L. S., Li-Fatou, A., Hazelton, C. M., Napolitani, E., Rubin, L. M.
Publikováno v:
Journal of Applied Physics; 10/1/2005, Vol. 98 Issue 7, p073521, 6p, 7 Graphs
Autor:
James J. Chambers, R. A. Chapman, Clive M. Freeman, Eric M. Vogel, Husam N. Alshareef, A. Li-Fatou, Hiro Niimi, Erich Wimmer, Christopher L. Hinkle, Rohit Galatage, J. B. Shaw
Publikováno v:
ECS Transactions. 35:285-295
Effective work function (EWF) changes of TiN/HfO2 annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obt
Autor:
Domingo Ferrer, Luigi Colombo, M. Jamil, Sanjay K. Banerjee, Elke Arenholz, Apurva Mehta, A. Li-Fatou, Hendrik Ohldag, G Lian, Samaresh Guchhait, John T. Markert
Publikováno v:
Physical Review B. 84
F ERROMAGNETISM IN M N -I MPLANTED E PITAXIALLY G ROWN G E ON S I (100) S. Guchhait 1 , M. Jamil 1 , H. Ohldag 2 , A. Mehta 2 , E. Arenholz 3 , G. Lian 4 , A. LiFatou 4 , D. A. Ferrer 1 , J. T. Markert 5 , L. Colombo 4 and S. K. Banerjee 1† Microel
Autor:
Husam N. Alshareef, A. Li-Fatou, Rohit Galatage, J. B. Shaw, Clive M. Freeman, R. A. Chapman, James J. Chambers, Erich Wimmer, Eric M. Vogel, Christopher L. Hinkle, Hiroaki Niimi
Publikováno v:
2010 Symposium on VLSI Technology.
In this contribution, NMOS and PMOS band edge effective work function (EWF) and correspondingly low Vt are demonstrated using standard fab materials and processes in a gate-last scheme. For NMOS, the use of an Al cladding layer results in Vt = 0.08 V
Autor:
B. Hornung, Al F. Tasch, Shayak Banerjee, A. Li-Fatou, Shyh-Horng Yang, Li Lin, C. Machala, Di Li
Publikováno v:
International Conferencre on Simulation of Semiconductor Processes and Devices.
The low energy as-implanted profile is very sensitive to the cap oxide layer thickness and PAI conditions. In this work, theoretical and experimental studies have been carried out quantitatively to investigate these dependencies. Using ZBL pair-speci
Publikováno v:
MRS Proceedings. 514
Titanium (Ti) and titanium nitride (TiN) films are widely used as barrier stack to prevent junction spiking. It is also an important material for an anti-reflection coating (ARC) on aluminum (Al) films to facilitate lithography processes during multi
Autor:
Husam N. Alshareef, Christopher L. Hinkle, A. Li-Fatou, Rohit Galatage, Clive M. Freeman, Erich Wimmer, R. A. Chapman, M. Christensen, J. B. Shaw, Hiroaki Niimi, James J. Chambers, Eric M. Vogel
Publikováno v:
Applied Physics Letters. 100:153501
Silicon N-metal-oxide-semiconductor (NMOS) and P-metal-oxide-semiconductor (PMOS) band edge effective work functions and the correspondingly low threshold voltages (Vt) are demonstrated using standard fab materials and processes in a gate-last scheme
Autor:
Christopher Hinkle, Rohit Galatage, Richard Chapman, Eric Vogel, Clive Freeman, Erich Wimmer, Hiro Niimi, Andrei Li-Fatou, James Chambers, Judy Shaw
Publikováno v:
ECS Meeting Abstracts. :1143-1143
not Available.
Autor:
A. Li-Fatou, Clive M. Freeman, James J. Chambers, Husam N. Alshareef, Hiroaki Niimi, R. A. Chapman, Eric M. Vogel, Rohit Galatage, J. B. Shaw, Erich Wimmer, Christopher L. Hinkle
Publikováno v:
Applied Physics Letters. 96:103502
Effective work function (EWF) changes of TiN/HfO2 annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achie