Zobrazeno 1 - 10
of 114
pro vyhledávání: '"A. Laades"'
Autor:
Töfflinger, Jan Amaru, Laades, Abdelazize, Leendertz, Caspar, Montañez, Liz Margarita, Korte, Lars, Stürzebecher, Uta, Sperlich, Hans-Peter, Rech, Bernd
Publikováno v:
In Energy Procedia 2014 55:845-854
Autor:
Roczen, Maurizio, Malguth, Enno, Schade, Martin, Schöpke, Andreas, Laades, Abdelazize, Blech, Michael, Gref, Orman, Barthel, Thomas, Töfflinger, Jan Amaru, Schmidt, Manfred, Leipner, Hartmut S., Korte, Lars, Rech, Bernd
Publikováno v:
In Journal of Non-Crystalline Solids 1 September 2012 358(17):2253-2256
Publikováno v:
In Materials Science & Engineering B 2009 159:202-205
Publikováno v:
In Thin Solid Films 2009 517(23):6396-6400
Autor:
Schmidt, M., Korte, L., Laades, A., Stangl, R., Schubert, Ch., Angermann, H., Conrad, E., Maydell, K.v.
Publikováno v:
In Thin Solid Films 2007 515(19):7475-7480
Autor:
Lars Korte, Uta Stürzebecher, A. Laades, Liz Margarita Montañez, J A Töfflinger, Caspar Leendertz, Bernd Rech, Hans-Peter Sperlich
Publikováno v:
Solar Energy Materials and Solar Cells. 135:49-56
The negative charge formation, the charge-trapping mechanisms and the interface defect passivation of aluminum oxide/silicon nitride (AlO x /SiN x ) stacks deposited by plasma-enhanced chemical vapor deposition on p- type crystalline silicon (c-Si) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f370bc7d83ad7cd1b2c7354456d21c71
https://doi.org/10.1016/j.solmat.2014.09.024
https://doi.org/10.1016/j.solmat.2014.09.024
Publikováno v:
Solid State Phenomena. 219:291-296
The deposition of thin and ultra-thin layers requires extremely clean, smooth and defect-free Silicon (Si) substrate surfaces as starting point. The preparation-induced surface micro-roughness and surface coverage of the substrates often affect the i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d76c9e5f7cb6a702768423099eb12d
https://doi.org/10.4028/www.scientific.net/ssp.219.291
https://doi.org/10.4028/www.scientific.net/ssp.219.291
Autor:
Liz Margarita Montañez, Hans-Peter Sperlich, Caspar Leendertz, A. Laades, J A Töfflinger, Lars Korte, Uta Stürzebecher, Bernd Rech
Publikováno v:
Energy Procedia. 55:845-854
The charge dynamics and the interface defect state density of AlOx/SiNx passivation stacks deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon (c-Si) wafers are investigated. High frequency (1 MHz) capacitance voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::875cf81b80f0c7233c4dc8eacbd825ed
https://doi.org/10.1016/j.egypro.2014.08.068
https://doi.org/10.1016/j.egypro.2014.08.068
Publikováno v:
Journal of Applied Physics; Nov2008, Vol. 104 Issue 10, p104503, 9p, 1 Diagram, 9 Graphs
Publikováno v:
Solid State Phenomena. :265-270
It has been found that association of iron-boron (FeB) pairs takes place during illumination of iron contaminated boron-doped silicon. The established FeB pair model is interpreted with respect to the quasi-Fermi level position, the stability conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a51d397077bf9213f9d0b52d7a2cea04
https://doi.org/10.4028/www.scientific.net/ssp.205-206.265
https://doi.org/10.4028/www.scientific.net/ssp.205-206.265