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Autor:
V. P. Popov, D. V. Khmel’nitskii, A. L. Semkov, A. V. Lukin, G. V. Mokichev, S. V. Kiryushkin, A. N. Kozikov, E. P. Magda, A. P. Stepovik, A. V. Kurochkin
Publikováno v:
Instruments and Experimental Techniques. 48:109-111
The use of an updated accelerator of the НГ-12И neutron generator as a high-current implanter of hydrogen ions (protons and deuterons) with energies of 175–210 MeV into wafers made of crystalline silicon is described. The ion-beam scanning syste