Zobrazeno 1 - 10
of 42
pro vyhledávání: '"A. L. Oleinik"'
Autor:
A. L. Oleinik
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 18, Iss 2, Pp 243-254 (2018)
Subject of Research.The paper deals with the problems of the mutual reconstruction (transformation) of acoustic and visual components (modalities) of speech. Audio recording of voice represents the acoustic component whereas the parallel video record
Externí odkaz:
https://doaj.org/article/7c15f25d6a044340a9d503665997bd72
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 17, Iss 1, Pp 62-74 (2017)
Subject of Research. The paper deals with methods and algorithms for mutual transformation of related pairs of images in order to enhance the capabilities of cross-modal multimedia retrieval (CMMR) technologies. We have thoroughly studied the problem
Externí odkaz:
https://doaj.org/article/c8e4a01a7beb4951987e07f998f937e5
Autor:
A. L. Oleinik
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 16, Iss 4, Pp 670-677 (2016)
Subject of Research. The paper deals with the problem of multiple face tracking in a video stream. The primary application of the implemented tracking system is the automatic video surveillance. The particular operating conditions of surveillance cam
Externí odkaz:
https://doaj.org/article/5152ec5cc0944b15bec9e5c2c3b35f15
Autor:
A. L. Oleinik
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 15, Iss 5, Pp 886-892 (2015)
Subject of Research. The paper deals with the problem of lip region image reconstruction from speech signal by means of Partial Least Squares regression. Such problems arise in connection with development of audio-visual speech processing methods. Au
Externí odkaz:
https://doaj.org/article/d2796fe0255949809cc5cc9c4ae5dab0
Publikováno v:
IEEE Electron Device Letters. 43:100-103
This work investigates the dynamic current leakage of \(S\)-diode, which is a GaAs-based avalanche switch doped with deep Fe acceptor traps. The dynamic leakage has negative effect on superfast switching parameters of this unique device, and here we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ba642317da48efa5a4b5319c94dd1cc
https://doi.org/10.1109/led.2021.3130596
https://doi.org/10.1109/led.2021.3130596
Publikováno v:
IEEE transactions on electron devices. 2021. Vol. 68, № 1. P. 57-65
The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped with deep Fe centers. The current and voltage time dependences are simulated in a simplified generator. The dynamic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58e3bff327afcaa0ff9f798171fdeace
https://doi.org/10.1109/ted.2020.3039213
https://doi.org/10.1109/ted.2020.3039213
Autor:
A. V. Almaev, Anastasiya D. Lozinskaya, B. O. Kushnarev, Ekaterina V. Chuprakova, Nikita N. Yakovlev, D. Gogova, Vladimir L. Oleinik, Vadim V. Novikov, E. V. Chernikov
Publikováno v:
Journal of vacuum science & technology A. 2021. Vol. 39, № 2. P. 023405-1-023405-11
High-temperature β-Ga2O3:Cr2O3-based sensors sensitive to oxygen- and hydrogen-containing gases have been developed and studied. Magnetron cosputtering is the method of choice for the thin film synthesis as an industry-compatible technique. The comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c3dd8656aea1dc29bfb3b2ba288c71d
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000925389
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000925389
Autor:
Vladimir L. Oleinik, Evgeny V. Balzovsky, Tatyana E. Smirnova, V. V. Kopyev, Maksim G. Verkholetov, I. A. Prudaev, O. P. Tolbanov
Publikováno v:
IEEE Transactions on Electron Devices. 65:3339-3344
The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on $\pi $ - $\nu $ -n and $\pi $ -n structures are presented. High-ohmic layers of the diodes were made by diffusion of deep chromium an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::599a47eddeee15ed03d32b53633e0e52
https://doi.org/10.1109/ted.2018.2845543
https://doi.org/10.1109/ted.2018.2845543
Publikováno v:
Physica status solidi A : applications and materials science. 2018. Vol. 215, № 8. P. 1700445 (1-5)
Red and yellow AlGaInP/GaAs light‐emitting diodes (LEDs) with multiple quantum wells grown by the metalorganic chemical vapor deposition technique were irradiated at room temperature by 10 MeV electrons at fluences of 1012–1016 cm−2. The damage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac767f09c2c3ec009753bd02e321b6b6
https://openrepository.ru/article?id=838675
https://openrepository.ru/article?id=838675
Autor:
Vladimir L. Oleinik, P. V. Gorlachuk, V. N. Brudnyi, Yu. L. Ryaboshtan, А. А. Marmalyuk, I. A. Prudaev, I. S. Romanov
Publikováno v:
Russian Physics Journal. 57:915-919
The results of experimental studies of forward current-voltage characteristics of LEDs with an active region consisting of the multiple (Al x Ga1–x )0.5In0.5P/(Al0.54Ga0.46)0.5In0.5P quantum wells are presented. The experiment showed that increasin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d01eacf18dc9a1d29f37d2f264a11350
https://doi.org/10.1007/s11182-014-0324-5
https://doi.org/10.1007/s11182-014-0324-5