Zobrazeno 1 - 4
of 4
pro vyhledávání: '"A. L. Guerassimov"'
Publikováno v:
Physica Status Solidi (a). 136:393-400
A more accurate approximation for the diffusion velocity in the space-charge layer of Schottky diodes is obtained. The influence of the dependence of the diffusion velocity on the applied voltage to the slope of I–V characteristics, calculated by t
Publikováno v:
physica status solidi (a). 122:K147-K150
Les niveaux profonds aux complexes de lacunes donneuses sont des centres de generation-recombinaison. L'influence observee du bombardement des substrats de Si, avec des ions Ar de 1 keV, s'explique par la generation de tels niveaux profonds dans les
Publikováno v:
Thin Solid Films. 115:291-298
Molybdenum layers were deposited onto silicon substrates at 400 °C by the reaction of MoCl 5 with H 2 . The electron barrier height at the Mo-Si interface is 0.7 eV. The Mo/Si diodes display nearly ideal characteristics including a reverse current i
Publikováno v:
Solar Cells. 20:99-118
Expressions for the concentration of the minority and majority carriers in the illuminated space charge layer of Schottky barrier structures are obtained. The dark current and the photocurrent are determined from the minority and majority carrier con