Zobrazeno 1 - 9
of 9
pro vyhledávání: '"A. L. Guerassimov"'
Publikováno v:
Physica Status Solidi (a). 136:393-400
A more accurate approximation for the diffusion velocity in the space-charge layer of Schottky diodes is obtained. The influence of the dependence of the diffusion velocity on the applied voltage to the slope of I–V characteristics, calculated by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5b9f3c4d41ef3ce64b70e996996f578
https://doi.org/10.1002/pssa.2211360212
https://doi.org/10.1002/pssa.2211360212
Publikováno v:
physica status solidi (a). 122:K147-K150
Les niveaux profonds aux complexes de lacunes donneuses sont des centres de generation-recombinaison. L'influence observee du bombardement des substrats de Si, avec des ions Ar de 1 keV, s'explique par la generation de tels niveaux profonds dans les
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95425169e5f8efa2d4a6d3c1bce1076b
https://doi.org/10.1002/pssa.2211220253
https://doi.org/10.1002/pssa.2211220253
Publikováno v:
Thin Solid Films. 115:291-298
Molybdenum layers were deposited onto silicon substrates at 400 °C by the reaction of MoCl 5 with H 2 . The electron barrier height at the Mo-Si interface is 0.7 eV. The Mo/Si diodes display nearly ideal characteristics including a reverse current i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55e33f106f3e7c39035a7b1a2f633a52
https://doi.org/10.1016/0040-6090(84)90092-0
https://doi.org/10.1016/0040-6090(84)90092-0
Publikováno v:
Solar Cells. 20:99-118
Expressions for the concentration of the minority and majority carriers in the illuminated space charge layer of Schottky barrier structures are obtained. The dark current and the photocurrent are determined from the minority and majority carrier con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c28d195e310caba13bc079c555642edb
https://doi.org/10.1016/0379-6787(87)90035-4
https://doi.org/10.1016/0379-6787(87)90035-4
Publikováno v:
Philosophical Magazine; May2014, Vol. 94 Issue 14, p1508-1528, 21p
Publikováno v:
Materials & Corrosion / Werkstoffe und Korrosion; Sep2004, Vol. 55 Issue 9, p665-670, 6p
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1998, Vol. 16 Issue 5, p2845-2850, 6p
Special topic volume with invited peer reviewed papers only.
Autor:
C.E. Morosanu, G. Siddall
The explosive growth in the semiconductor industry has caused a rapid evolution of thin film materials that lend themselves to the fabrication of state-of-the-art semiconductor devices. Early in the 1960s an old research technique named chemical vapo