Zobrazeno 1 - 10
of 586
pro vyhledávání: '"A. L. Gudkov"'
Autor:
Igor I. Soloviev, Nikolay V. Klenov, Sergey V. Bakurskiy, Mikhail Yu. Kupriyanov, Alexander L. Gudkov, Anatoli S. Sidorenko
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 2689-2710 (2017)
The predictions of Moore’s law are considered by experts to be valid until 2020 giving rise to “post-Moore’s” technologies afterwards. Energy efficiency is one of the major challenges in high-performance computing that should be answered. Sup
Externí odkaz:
https://doaj.org/article/cd43d578960148b6a78eda1c0182226c
Publikováno v:
Sociological Research. 60:1-152
Publikováno v:
Nanobiotechnology Reports. 16:811-820
Akademický článek
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Autor:
Petrov, Nikolay (AUTHOR)
Publikováno v:
Russian Social Science Review. Jul-Dec2022, Vol. 63 Issue 4-6, p385-409. 25p.
Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Petrov, Nikolay (AUTHOR)
Publikováno v:
Russian Politics & Law. 2021, Vol. 58 Issue 1/2, p45-70. 26p.
Autor:
Anatoli S. Sidorenko, Alexander L Gudkov, Nikolay V. Klenov, S. V. Bakurskiy, Igor I. Soloviev, Mikhail Yu. Kupriyanov
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 8, Iss 1, Pp 2689-2710 (2017)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology
The predictions of Moore's law are considered by experts to be valid until 2020 giving rise to "post-Moore's" technologies afterwards. Energy efficiency is one of the major challenges in high-performance computing that should be answered. Superconduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85c33122b6221b5e3ecf3d897236e0a2
http://arxiv.org/abs/1706.09124
http://arxiv.org/abs/1706.09124
Autor:
Nikolay V. Klenov, S. V. Bakurskiy, A. V. Kuznetsov, A. L. Gudkov, Igor I. Soloviev, M. Yu. Kupriyanov
Publikováno v:
Moscow University Physics Bulletin. 69:275-286
This review is devoted to a discussion of the prospects for solving the problem of a low degree of integration of the traditional elements for promising (due to the high performance and extremely low energy dissipation) superconducting digital electr
Properties of planar Nb/α-Si/Nb Josephson junctions with various degrees of doping of the α-Si layer
Publikováno v:
Journal of Experimental and Theoretical Physics. 114:818-829
The properties of Nb/α-Si/Nb planar Josephson junctions with various degrees of doping of the amorphous silicon layer are experimentally studied. Tungsten is used as a doping impurity. The properties of the Josephson junctions are shown to change su