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pro vyhledávání: '"A. L. Bouchetout"'
Publikováno v:
ICTON
ZnO oxide is a promising material for optoelectronics because of its wide and direct gap (E g = 3.37 eV at room temperature). Pure and doped zinc oxide powders of various grain sizes have been synthesized by vaporisation-condensation using a solar fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab8c162e657017f897f7fa93d484d5ab
https://doi.org/10.1109/icton.2019.8840558
https://doi.org/10.1109/icton.2019.8840558
