Zobrazeno 1 - 10
of 45
pro vyhledávání: '"A. Kutlimratov"'
Autor:
A. S. Saidov, D. V. Saparov, Sh.N. Usmonov, A. Kutlimratov, J.M. Abdiev, M. Kalanov, A.Sh. Razzakov, A.M. Akhmedov
Publikováno v:
Advances in Condensed Matter Physics, Vol 2021 (2021)
Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of
Externí odkaz:
https://doaj.org/article/fbed6f6a076048809776262370a5f41c
Autor:
Khimmatali JURAEV, Mardonbek KHAJIEV, Aleksandr KUTLIMRATOV, Abdumirkhakim AKHMEDOV, Dilmurad SAIDOV
Publikováno v:
Medžiagotyra (2024)
In this paper, the electrophysical characteristics of the 4H-SiC p-n junction created by low-temperature diffusion of aluminum were studied. Current-voltage (I-V) characteristics are analysed, and the current transport mechanisms in 4H-SiC p-n juncti
Externí odkaz:
https://doaj.org/article/4a67bb59a428486092dd456801af6c0d
Publikováno v:
Applied Solar Energy (19349424); Oct2023, Vol. 59 Issue 5, p727-738, 12p
Publikováno v:
Physical Sciences & Technology; 2023, Vol. 10 Issue 1, p35-41, 7p
Autor:
Aleksandr Kutlimratov
Publikováno v:
Universum:Technical sciences. 88
Akademický článek
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Autor:
Saidov, A. S., Saparov, D. V., Usmonov, Sh.N., Kutlimratov, A., Abdiev, J.M., Kalanov, M., Razzakov, A.Sh., Akhmedov, A.M.
Publikováno v:
Advances in Condensed Matter Physics, Vol 2021 (2021)
Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of
Structial, Electrophysical, and Optical Properties of ITO Films Produced by the Modified CVD Method.
Publikováno v:
Applied Solar Energy (19349424); Aug2022, Vol. 58 Issue 4, p497-502, 6p
Autor:
Aleksandr Kutlimratov
Publikováno v:
Engineering Solutions. 18
Publikováno v:
Современные тенденции развития физики полупроводников: достижения, проблемы и перспективы.