Zobrazeno 1 - 10
of 206
pro vyhledávání: '"A. Kozikov"'
Autor:
T. P. Lyons, D. Gillard, A. Molina-Sánchez, A. Misra, F. Withers, P. S. Keatley, A. Kozikov, T. Taniguchi, K. Watanabe, K. S. Novoselov, J. Fernández-Rossier, A. I. Tartakovskii
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
One advantage of van der Waals materials is the ability to combine different materials in layers to form new heterostructures. Here, the authors investigate heterostructures of CrBr3 and MoSe2, and find that the ferromagnetism of CrBr3 enhances the v
Externí odkaz:
https://doaj.org/article/48cdea52d5f54d52a6d9b33742b6b7ec
Autor:
J. Binder, J. Howarth, F. Withers, M. R. Molas, T. Taniguchi, K. Watanabe, C. Faugeras, A. Wysmolek, M. Danovich, V. I. Fal’ko, A. K. Geim, K. S. Novoselov, M. Potemski, A. Kozikov
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
The authors present electroluminescence measurements of light-emitting devices based on van der Waals heterostructures, and observe a lower than expected threshold voltage for intralayer electroluminescence, attributed to non-radiative Auger-type rec
Externí odkaz:
https://doaj.org/article/f0e07b892c39407c8302d9e0bf40da58
Autor:
A. P. Rooney, Z. Li, W. Zhao, A. Gholinia, A. Kozikov, G. Auton, F. Ding, R. V. Gorbachev, R. J. Young, S. J. Haigh
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
All materials subjected to mechanical deformation form low energy interfaces known as twin boundaries. Here, the authors investigate a variety of structural features that form upon bending atomically thin 2D-crystals, and predict distinct classes of
Externí odkaz:
https://doaj.org/article/d8a751c4f010468999ba4636cfeebd63
Autor:
Catanzaro, Alessandro, Genco, Armando, Louca, Charalambos, Ruiz-Tijerina, David A., Gillard, Daniel J., Sortino, Luca, Kozikov, Aleksey, Alexeev, Evgeny M., Pisoni, Riccardo, Hague, Lee, Watanabe, Kenji, Taniguchi, Takashi, Ensslin, Klauss, Novoselov, Kostya S., Fal'ko, Vladimir, Tartakovskii, Alexander I.
Bandstructure engineering using alloying is widely utilised for achieving optimised performance in modern semiconductor devices. While alloying has been studied in monolayer transition metal dichalcogenides, its application in van der Waals heterostr
Externí odkaz:
http://arxiv.org/abs/2309.13312
Autor:
C. R. Woods, F. Withers, M. J. Zhu, Y. Cao, G. Yu, A. Kozikov, M. Ben Shalom, S. V. Morozov, M. M. van Wijk, A. Fasolino, M. I. Katsnelson, K. Watanabe, T. Taniguchi, A. K. Geim, A. Mishchenko, K. S. Novoselov
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-5 (2016)
Precise control of the relative orientation of two two-dimensional layers enables reproducible fabrication of heterostructure devices. Here, the authors show that graphene rotates towards the crystallographic direction of a boron-nitride substrate du
Externí odkaz:
https://doaj.org/article/1d07e6d66b714e8d88cd97d967e9041e
Autor:
Marcin Giza, Aleksey Kozikov, Paula L. Lalaguna, Jake D. Hutchinson, Vaibhav Verma, Benjamin Vella, Rahul Kumar, Nathan Hill, Dumitru Sirbu, Elisabetta Arca, Noel Healy, Rebecca L. Milot, Malcolm Kadodwala, Pablo Docampo
Publikováno v:
Small Structures, Vol 5, Iss 11, Pp n/a-n/a (2024)
Surface treatment of perovskite materials with their layered counterparts has become an ubiquitous strategy for maximizing device performance. While layered materials confer great benefits to the longevity and long‐term efficiency of the resulting
Externí odkaz:
https://doaj.org/article/9e23af9b3902453cb30dd8c5a747d2d3
Autor:
Giza, Marcin1 (AUTHOR), Kozikov, Aleksey2 (AUTHOR) Aleksey.kozikov@newcastle.ac.uk, Lalaguna, Paula L.1 (AUTHOR), Hutchinson, Jake D.3 (AUTHOR), Verma, Vaibhav2 (AUTHOR), Vella, Benjamin1 (AUTHOR), Kumar, Rahul1 (AUTHOR), Hill, Nathan2 (AUTHOR), Sirbu, Dumitru2 (AUTHOR), Arca, Elisabetta2 (AUTHOR), Healy, Noel2 (AUTHOR), Milot, Rebecca L.3 (AUTHOR), Kadodwala, Malcolm1 (AUTHOR), Docampo, Pablo1 (AUTHOR) Pablo.docampo@glasgow.ac.uk
Publikováno v:
Small Structures. Nov2024, Vol. 5 Issue 11, p1-12. 12p.
Autor:
Alexeev, Evgeny M., Mullin, Nic, Ares, Pablo, Nevison-Andrews, Harriet, Skrypka, Oleksandr V., Godde, Tillmann, Kozikov, Aleksey, Hague, Lee, Wang, Yibo, Novoselov, Kostya S., Fumagalli, Laura, Hobbs, Jamie K., Tartakovskii, Alexander I.
The availability of accessible fabrication methods based on deterministic transfer of atomically thin crystals has been essential for the rapid expansion of research into van der Waals heterostructures. An inherent issue of these techniques is the de
Externí odkaz:
http://arxiv.org/abs/2004.05624
Autor:
Lyons, T. P., Gillard, D., Molina-Sánchez, A., Misra, A., Withers, F., Keatley, P. S., Kozikov, A., Taniguchi, T., Watanabe, K., Novoselov, K. S., Fernández-Rossier, J., Tartakovskii, A. I.
Publikováno v:
Nature Communications 11, 6021 (2020)
Semiconducting ferromagnet-nonmagnet interfaces in van der Waals heterostructures present a unique opportunity to investigate magnetic proximity interactions dependent upon a multitude of phenomena including valley and layer pseudospins, moir\'e peri
Externí odkaz:
http://arxiv.org/abs/2004.04073
Autor:
Binder, J., Howarth, J., Withers, F., Molas, M. R., Taniguchi, T., Watanabe, K., Faugeras, C., Wysmolek, A., Danovich, M., Fal'ko, V. I., Geim, A. K., Novoselov, K. S., Potemski, M., Kozikov, A.
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates
Externí odkaz:
http://arxiv.org/abs/1905.10076