Zobrazeno 1 - 10
of 44
pro vyhledávání: '"A. Kohzen"'
Publikováno v:
IEEE Transactions on Electron Devices. 42:1413-1418
A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a0a8aba996e682661a429c08fe021e
https://doi.org/10.1109/16.398656
https://doi.org/10.1109/16.398656
Publikováno v:
Journal of Crystal Growth. 124:70-75
InAlAs/InGaAs was grown by low-pressure MOVPE using trimethylamine alane as an aluminum source. Although there is a parasitic reaction between trimethylindium and trimethylamine alane, the growth rate and lattice-matching are well controlled. The pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e265edd48313757851b3562be72aab4
https://doi.org/10.1016/0022-0248(92)90439-p
https://doi.org/10.1016/0022-0248(92)90439-p
Autor:
Nobuo Morita, Masakazu Harada, Takeshi Wada, Tatsuro Kohzen, Kazuyuki Miyata, Tadayuki Sakamoto
Publikováno v:
Japanese Journal of Oral and Maxillofacial Surgery. 38:474-478
The tumors of central nervous tissue are extremely rare in the oral cavity. Two cases of congenital tumor of heterotopic neuroglial tissue of the tongue and palate are reported, with a review of the literature and some discussion on its origin.Case 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f653b64f3902a0cb7f154a303f892128
https://doi.org/10.5794/jjoms.38.474
https://doi.org/10.5794/jjoms.38.474
Publikováno v:
Sixth International Conference Metalorganic Vapor Phase Epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b79974dba5611fdc6f7ccbc1f65742
https://doi.org/10.1109/movpe.1992.664846
https://doi.org/10.1109/movpe.1992.664846
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
The authors discuss a novel HEMT (high electron mobility transistor) channel structure, consisting of InGaAs and InP, which can utilize both the high electron mobility of InGaAs at low electric field and InP's high drift velocity at high electric fie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81ad9e37a0fcb92ba74668d9d855d78b
https://doi.org/10.1109/iciprm.1992.235699
https://doi.org/10.1109/iciprm.1992.235699
Publikováno v:
IEEE Photonics Technology Letters. 4:754-756
A long-wavelength monolithically integrated photoreceiver which is capable of operation at a 10-Gb/s NRZ light signal is described. The photoreceiver was fabricated using an Si-planar-doping technique to enhance the uniformity and transconductance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb92551ae045db1a6401c5475a7b7cc
https://doi.org/10.1109/68.145262
https://doi.org/10.1109/68.145262
Publikováno v:
IEEE Photonics Technology Letters. 3:540-542
A long-wavelength monolithically integrated receiver optoelectronic integrated circuit (OEIC) comprising a low input-capacitance cascode transimpedance preamplifier and a p-i-n photodiode has been demonstrated. The OEIC is fabricated using metal-orga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ef51a08fc08d3d0f3074e3cef589b9a
https://doi.org/10.1109/68.91028
https://doi.org/10.1109/68.91028
Publikováno v:
IEEE Photonics Technology Letters. 3:378-380
A long-wavelength monolithically integrated high-sensitivity single-channel photoreceiver and a two-channel receiver array which requires only a single 5-V power supply are demonstrated. Both devices were fabricated using Be ion implantation and MOVP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c91f5341f5a402ae31bc48423eea0f
https://doi.org/10.1109/68.82118
https://doi.org/10.1109/68.82118
Publikováno v:
Digest of Conference on Optical Fiber Communication.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d043d286fb8c64aa93bf25b1e21b55f4
https://doi.org/10.1364/ofc.1992.thj2
https://doi.org/10.1364/ofc.1992.thj2
Publikováno v:
Electronics Letters. 30:267-268
A very-wide-bandwidth long-wavelength monolithically integrated photoreceiver is presented which comprises an InGaAs pin PD and a transimpedance amplifier. The receiver uses epilayers grown by one-step MOVPE. The InGaAs channel high-electron-mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::678e0e668526318d180a6880e304b95f
https://doi.org/10.1049/el:19940147
https://doi.org/10.1049/el:19940147