Výsledky vyhledávání - "A. Klenevsky"

Modeling of disordered regions in the process of radiation defect formation

Autor: M. S. Kovalenko, N. M. Bogatov, L. R. Grigorian, A.V. Klenevsky

Publikováno v: Ecological Bulletin of Research Centers of the Black Sea Economic Cooperation. 16:59-65

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f4025d676fe083e2c20ba777e8a3bcd3
https://doi.org/10.31429/vestnik-16-1-59-65

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Electromechanical Design Handset Prosthesis

Autor: Georgiy Klenevsky, Artem Avdeev, Pavel Kolesnik

Publikováno v: 2020 Moscow Workshop on Electronic and Networking Technologies (MWENT).

This paper describes the development and testing of an electromechanical hand prosthesis using feedback technology to compensate for lost tactile sensations partially, as well as how the device is controlled by neurointerface. In the course of this w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5af1ee989659edfb490dd34d13d4f9e4
https://doi.org/10.1109/mwent47943.2020.9067407

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Modelling of voltage changes in the n-p junction in the pulse mode

Autor: M S Kovalenko, V S Volodin, A.V. Klenevsky, N M Bogatov, L R Grigoryan

Publikováno v: Journal of Physics: Conference Series. 2094:022020

The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of diff

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d0805f3c9997a3b538480d9192abfe25
https://doi.org/10.1088/1742-6596/2094/2/022020

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Formation of primary radiation defects in a non-equilibrium silicon structure by electron irradiation

Autor: I. Nesterenko, L R Grigoryan, M. Kovalenko, A. Klenevsky, N. Bogatov

Publikováno v: Journal of Physics: Conference Series. 1679:032077

Based on numerical simulation, the influence of the position in the band gap of the Fermi quasilevel of electrons on the dependence of the linear generation rate of interstitial silicon, vacancies, divacancies, and disordering regions in silicon irra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce7e016b89736c27a54b2261e459c27b
https://doi.org/10.1088/1742-6596/1679/3/032077

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