Zobrazeno 1 - 10
of 109
pro vyhledávání: '"A. Kalavade"'
Publikováno v:
Journal of Advanced Zoology; 2024 Supplement, Vol. 45, p152-157, 6p
Autor:
Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen W. Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee-Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen V. Prabhu, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat M. Pathak, Pranav Kalavade
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177753a2ce8bb9f42c2ea9a8a3d32f41
https://doi.org/10.1109/isscc42615.2023.10067616
https://doi.org/10.1109/isscc42615.2023.10067616
Autor:
Rezaul Haque, Aliasgar S. Madraswala, Cindy Sun, Bharat M. Pathak, Jacqueline Snyder, Kristopher H. Gaewsky, Ali Khakifirooz, Binh Ngo, Chang Wan Ha, Prabhu Naveen Vittal, Karthikeyan Ramamurthi, Fastow Richard, Shantanu R. Rajwade, Owen W. Jungroth, Deepak Thimmegowda, Pranav Kalavade, Rohit S. Shenoy, Steven Law, Sriram Balasubrahmanyam
Publikováno v:
ISSCC
Continued improvement in the 3D NAND bit density is essential to satisfy the exponentially growing demand for data storage. The transition from 3b/cell (TLC) to 4b/cell (QLC) is a significant step towards delivering higher bit density. The increased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb44bd4a0a1dc88696b6b21df77445d2
https://doi.org/10.1109/isscc42613.2021.9365777
https://doi.org/10.1109/isscc42613.2021.9365777
Autor:
Pranav Kalavade
Publikováno v:
2020 IEEE International Memory Workshop (IMW).
This paper describes 4 bits/cell (QLC) 3D NAND based on 96 layer Floating Gate (FG) cell and CMOS under Array (CuA), achieving high areal density, performance, and reliability. More than 10million QLC FG 3D NAND SSDs have been shipped for both Client
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::459a385b6c89abd2bb8cd0d5caa68b3f
https://doi.org/10.1109/imw48823.2020.9108135
https://doi.org/10.1109/imw48823.2020.9108135
Shwitra is a type of skin disorder. It can be compared with Vitiligo according to modern science. Shwitra, Kilas, Varun, Darun are the synonyms in ayu texts. Whitish discolouration of the skin is main sign in the disease. According to ayu.texts Udumb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3343030bb0fe3d7f3f70d3e688fb6dbf
Shitapitta Udarda, Kotha are the types of skin disorders mentioned in Ayu.samhitas .These can be correlated with Urticaria in modern science. Actually these are three separate disorders to ayu .samhitas. Burning sensation & itching all over the body
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fad54e6b2fe7429df9fb74da8cc03a2
The spleen is lymphatic organ in the human body. Spleen is connected to the blood vascular system. It serves as a filter for blood and plays vital role in the immune responses of the body. It is wedge shaped organ located mainly in the left hypochond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a36c03e6e54d69b184006a4f1499fb1
Autor:
Krishna K. Parat, Yijie Zhao, Toru Tanzawa, Pranav Kalavade, Haitao Liu, Akira Goda, A. Torsi
Publikováno v:
IEEE Transactions on Electron Devices. 58:11-16
We have developed a program-disturb model to characterize the channel potential of the program-inhibited string during NAND flash cell programming. This model includes cell-to-cell capacitances from 3-D technology computer-aided design simulation and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6758f8f01a97372d7e1b2d847fb06c58
https://doi.org/10.1109/ted.2010.2087338
https://doi.org/10.1109/ted.2010.2087338
Publikováno v:
IEEE Transactions on Electron Devices. 55:632-639
A sub-45-nm body thickness, vertical-channel, double-gate MOSFET (VDFET) is fabricated on a bulk silicon substrate. The process, in principle, is scalable down to sub-5-nm body thicknesses. It is realized that using very coarse lithography (~1 mum re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56bf8fbcc79acd2ffeaf504ba30a97b4
https://doi.org/10.1109/ted.2007.913003
https://doi.org/10.1109/ted.2007.913003
Publikováno v:
ECS Transactions. 3:403-414
Geometry dependent thermal oxidation rates of silicon/polysilicon on concave and convex surfaces are complex and need a better understanding. The complexity is a result of several competing effects, namely, volume expansion stress, area effects, stre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e866afe5b6e1299ea28ac9ceb1f592e7
https://doi.org/10.1149/1.2356300
https://doi.org/10.1149/1.2356300