Zobrazeno 1 - 10
of 464
pro vyhledávání: '"A. Kakanakova-Georgieva"'
Conceptual 2D group III nitrides and oxides (e.g., 2D InN and 2D InO) in heterostructures with graphene have been realized by metalorganic chemical vapor deposition (MOCVD). MOCVD is credited with being central to fabrication of established semicondu
Externí odkaz:
http://arxiv.org/abs/2206.10270
Autor:
Sfuncia, Gianfranco, Nicotra, Giuseppe, Giannazzo, Filippo, Pécz, Béla, Gueorguiev, Gueorgui Kostov, Kakanakova-Georgieva, Anelia
Predictive first-principles calculations suggest graphitic-like GaN to be theoretically possible. Thus far, it has not been experimentally reported. We report on GaN monolayer in a buckled geometry obtained in confinement at graphene/SiC interface by
Externí odkaz:
http://arxiv.org/abs/2206.10247
Metalorganic chemical vapor deposition (MOCVD) of GaN layers doped with Mg atoms to the recognized optimum level of [Mg] $\sim2 \times 10^{19}$ cm$^{-3}$ has been performed. In a sequence of MOCVD runs, operational conditions, including temperature a
Externí odkaz:
http://arxiv.org/abs/2203.10654
Autor:
de Almeida Jr., Edward Ferraz1 (AUTHOR) edward.almeida@ufob.edu.br, Kakanakova-Georgieva, Anelia2 (AUTHOR) anelia.kakanakova@liu.se, Gueorguiev, Gueorgui Kostov2 (AUTHOR) gueorgui.kostov.gueorguiev@liu.se
Publikováno v:
Materials (1996-1944). Feb2024, Vol. 17 Issue 3, p616. 10p.
Autor:
Kakanakova-Georgieva, Anelia, Giannazzo, Filippo, Nicotra, Giuseppe, Cora, Ildikó, Gueorguiev, Gueorgui K., Persson, Per O.Å., Pécz, Béla
Publikováno v:
In Applied Surface Science 15 May 2021 548
Autor:
Schöche, S., Hofmann, T., Nilsson, D., Kakanakova-Georgieva, A., Janzên, E., Kühne, P., Lorenz, K., Schubert, M., Darakchieva, V.
The phonon mode parameters and anisotropic mid-infrared dielectric function tensor components of high- Al-content Al$_x$Ga$_{1-x}$N alloys in dependence of the Al content $x$ are precisely determined from mid-infrared spectroscopic ellipsometry measu
Externí odkaz:
http://arxiv.org/abs/1512.01427
Autor:
de Oliveira, Maria I.A., Rivelino, Roberto, de Brito Mota, Fernando, Kakanakova-Georgieva, Anelia, Gueorguiev, Gueorgui K.
Publikováno v:
In Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 15 January 2021 245
Autor:
Schöche, S., Kühne, P., Hofmann, T., Schubert, M., Nilsson, D., Kakanakova-Georgieva, A., Janzén, E., Darakchieva, V.
The effective electron mass parameter in Si-doped Al$_{0.72}$Ga$_{0.28}$N is determined to be $m^\ast=(0.336\pm0.020)\,m_0$ from mid-infrared optical Hall effect measurements. No significant anisotropy of the effective electron mass parameter is foun
Externí odkaz:
http://arxiv.org/abs/1311.3684
Autor:
Shtepliuk, Ivan, Ivanov, Ivan G., Iakimov, Tihomir, Yakimova, Rositsa, Kakanakova-Georgieva, Anelia, Fiorenza, Patrick, Giannazzo, Filippo
Publikováno v:
In Materials Science in Semiconductor Processing 15 June 2019 96:145-152
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