Zobrazeno 1 - 10
of 65
pro vyhledávání: '"A. KULIGK"'
Publikováno v:
In Solid State Electronics 2009 53(3):364-370
Autor:
Reigrotzki, M, Madureira, J.R, Kuligk, A, Fitzer, N *, Redmer, R, Goodnick, S.M, Dür, M, Schattke, W
Publikováno v:
In Physica B: Physics of Condensed Matter 2002 314(1):52-54
Autor:
Raker, T. *, Kuhn, T., Kuligk, A., Fitzer, N., Redmer, R., Zuccaro, S., Niedernostheide, F.-J., Purwins, H.-G.
Publikováno v:
In Physica B: Physics of Condensed Matter 2002 314(1):185-188
Autor:
A. Kuligk, Bernd Meinerzhagen
Publikováno v:
Solid-State Electronics. 108:84-89
The hole mobility reduction due to remote dipole scattering in p-MOSFETs with TiN/HfO2/SiO2 gate stacks is studied based on the self-consistent solution of 6 × 6 k · p Schrodinger equation, multi-subband Boltzmann transport equations and Poisson eq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d4a7fcf6503083f4b04584fb32fdc4f4
https://doi.org/10.1016/j.sse.2014.12.021
https://doi.org/10.1016/j.sse.2014.12.021
Autor:
Koops, H.W.P ∗, Hoinkis, O.E, Honsberg, M.E.W, Schmidt, R, Blum, R, Böttger, G, Kuligk, A, Liguda, C, Eich, M
Publikováno v:
In Microelectronic Engineering 2001 57:995-1001
Autor:
S. Zuccaro, Ronald Redmer, N. Fitzer, F.-J. Niedernostheide, Hans-Georg Purwins, Tilmann Kuhn, Th. Raker, A. Kuligk
Publikováno v:
Physica B: Condensed Matter. 314:185-188
We present a combined experimental and theoretical analysis of the high field transport in ZnS:Mn ACTFEL devices. The theory consists in a first principles calculation of the impact ionization (II) coefficient and then this parameter is used in a dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44cb1903a84cea88b00f1e27e2b65e9e
https://doi.org/10.1016/s0921-4526(01)01379-5
https://doi.org/10.1016/s0921-4526(01)01379-5
Autor:
Robert Blum, M.E.W Honsberg, Hans W. P. Koops, O.E Hoinkis, R Schmidt, Manfred Eich, A. Kuligk, C. Liguda, G. Böttger
Publikováno v:
Microelectronic Engineering. :995-1001
Three-dimensional additive nanolithography with electron beam-induced deposition is suited for rapid-prototyping of photonic crystals. It is used to construct rods of 3 μm in height from nanocrystalline material having an aspect ratio >15. The depos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::329cc1e94cb43974c05f8efb157f7cf6
https://doi.org/10.1016/s0167-9317(01)00565-2
https://doi.org/10.1016/s0167-9317(01)00565-2
Publikováno v:
International Journal of High Speed Electronics and Systems. 11:511-524
Impact ionization plays a crucial role for electron transport in wide-bandgap semiconductors at high electric fields. Therefore, a realistic band structure has to be used in calculations of the microscopic scattering rate, as well as high field quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aea79d59e17dcbac703a712ab9a7e20
https://doi.org/10.1142/s0129156401000939
https://doi.org/10.1142/s0129156401000939
Publikováno v:
2013 14th International Conference on Ultimate Integration on Silicon (ULIS).
Program disturb may ultimately limit the scalability of modern NAND flash memory technologies and is typically most serious for the memory cells neighboring the string select transistors. The feasibility, accuracy, and predictive capability of a new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2f31d0c5902db8ec0f790e7fdb397fe
https://doi.org/10.1109/ulis.2013.6523507
https://doi.org/10.1109/ulis.2013.6523507