Zobrazeno 1 - 10
of 47
pro vyhledávání: '"A. K. Ranade"'
Autor:
O. Hamid, A. Shoushtari, S. Stanhope, L. Collins, C. Britton-Rivet, E. Leach, A. Benlahrech, K. Ranade, J.C. Hassel
Publikováno v:
EJC Skin Cancer, Vol 2, Iss , Pp 100140- (2024)
Externí odkaz:
https://doaj.org/article/e50d5617bf3a4ee987dc475af2a2f548
Autor:
Venkata Krishna Rao Rama, Ajinkya K. Ranade, Pradeep Desai, Bhagyashri Todankar, Golap Kalita, Hiroo Suzuki, Masaki Tanemura, Yasuhiko Hayashi
Publikováno v:
ACS Omega, Vol 7, Iss 30, Pp 26021-26028 (2022)
Externí odkaz:
https://doaj.org/article/7c4f30bc2b914dc59d7a1b1a2bf4fb3c
Autor:
Rama Venkata Krishna Rao, Ajinkya K. Ranade, Pradeep Desai, Golap Kalita, Hiroo Suzuki, Yasuhiko Hayashi
Publikováno v:
SN Applied Sciences, Vol 3, Iss 10, Pp 1-9 (2021)
Abstract Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperat
Externí odkaz:
https://doaj.org/article/5fbd9be782fb41678c0b1163879efecd
Autor:
Ajinkya K. Ranade, Golap Kalita, Pradeep Desai, Masaki Tanemura, Bhagyashri Todankar, Tharangattu N. Narayanan
Publikováno v:
ChemistrySelect. 6:4867-4873
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab75e25c135967a56b0a7ee47e532f7c
https://doi.org/10.1002/slct.202101068
https://doi.org/10.1002/slct.202101068
Autor:
Sukhjeet K. Ranade, Supriya Anand
Publikováno v:
Multimedia Tools and Applications. 80:10797-10820
The Zernike and pseudo-Zernike moments (ZMs/PZMs) have been found useful for a variety of applications requiring feature extraction due to their favorable properties, such as low information redundancy, rotational invariance, higher noise resilience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::314682951334902fe1f7f21ae10354f7
https://doi.org/10.1007/s11042-020-10244-6
https://doi.org/10.1007/s11042-020-10244-6
Autor:
Mandar Shinde, Masaki Tanemura, Rakesh D. Mahyavanshi, Pradeep Desai, Ajinkya K. Ranade, Golap Kalita, Bhagyashri Todankar
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:2040-2048
The feasibility of van der Waals (VdW) heteroepitaxy of molybdenum disulphide (MoS2) layers on gallium nitride (GaN) semiconductor has attracted significant interest in heterojunction optoelectronic device applications. Here, we report on the growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7551ce2c432369948f933c994b424d2
https://doi.org/10.1007/s10854-019-02723-w
https://doi.org/10.1007/s10854-019-02723-w
Publikováno v:
ACS Applied Electronic Materials. 1:302-310
Charge transfer interaction at the interface of semiconducting layered materials is of great interest to develop effective heterojunction optoelectronic devices. Here, we demonstrate the charge transfer interaction and formation of an active heteroju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35ddcb70e15cdb9fd6686eed29178a23
https://doi.org/10.1021/acsaelm.8b00069
https://doi.org/10.1021/acsaelm.8b00069
Autor:
Sukhjeet K. Ranade, Supriya Anand
Publikováno v:
Proceedings of 6th International Conference on Recent Trends in Computing ISBN: 9789813345003
The quaternion moments (QMs) have been successfully utilized for numerous image processing and pattern recognition applications due to their ability to capture and represent the color information holistically. In this paper, we propose a method based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba1541147b738a16a61c1fd65ab11954
https://doi.org/10.1007/978-981-33-4501-0_56
https://doi.org/10.1007/978-981-33-4501-0_56
Autor:
Masaki Tanemura, Rakesh D. Mahyavanshi, Masaharu Kondo, Pradeep Desai, Ajinkya K. Ranade, Takehisa Dewa, Golap Kalita
Publikováno v:
IEEE Transactions on Electron Devices. 65:4434-4440
The heterostructures fabricated with a combination of 2-D materials and conventional semiconductors are of great interest owing to their unique optoelectronic properties. Here, we demonstrate the fabrication of a germanium (Ge)/MoS2 heterostructure a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3f0dd9dd739d19963f7e6bb2e051c82
https://doi.org/10.1109/ted.2018.2864174
https://doi.org/10.1109/ted.2018.2864174
Autor:
Rama Venkata Krishna Rao, Golap Kalita, Yasuhiko Hayashi, Hiroo Suzuki, Pradeep Desai, Ajinkya K. Ranade
Publikováno v:
SN Applied Sciences, Vol 3, Iss 10, Pp 1-9 (2021)
Abstract Temperature-dependent studies of Ga2O3-based heterojunction devices are important in understanding its carrier transport mechanism, junction barrier potential, and stability at higher temperatures. In this study, we investigated the temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce76bbe3a9f92cb38431d5052a7928a8
https://ousar.lib.okayama-u.ac.jp/62436
https://ousar.lib.okayama-u.ac.jp/62436